Despite the recent success of GeSn infrared lasers, the high lasing threshold currently limits
their integration into practical applications. While structural defects in epitaxial GeSn layers …

In the past decades, group IV nanowires and nanoparticles have been the subject of
extensive research. Beside tremendous progress in morphological control and integration in …

Abstract β-Ga 2 O 3 is a promising material for the development of next-generation power
electronic and optoelectronic devices due to its exceptional properties, including ultrawide …

Despite the dominance in consumer electronics, the use of group-IV semiconductors and
their heterostructures is still limited for photonic devices, attributed to the poor emission …

Strain-engineered graphene has garnered much attention recently owing to the possibilities
of creating substantial energy gaps enabled by pseudo-magnetic fields (PMFs). While …

In this paper, we discuss how the deliberate and controlled introduction of strain can be
used to improve the performance of semiconductor lasers. We show how strain-induced …

Molecular Dynamics simulations are used to characterise tensile mechanical properties of
zirconium single crystal nanowire by employing the second nearest neighbour modified …

The second-order χ (2) process underpins many important nonlinear optical applications in
the field of classical and quantum optics. Generally, the χ (2) process manifests itself only in …

Epitaxial growth of Ge on Si has been widely studied for photonic and electronic
applications. However, GeSi interdiffusion during the growth or annealing deteriorates the …

Indium phosphide (InP) is widely utilized in the fields of electronics and photovoltaics due to
its high electron mobility and high photoelectric conversion efficiency. Strain engineering …