Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage,
higher thermal conductivity, higher operating frequency, higher operating temperature, and …

This paper discusses the current state of SiC electronics research at Arkansas Power
Electronics International, Inc.(APEI) with regard to high-temperature environments and …

In the last two decades, bulk, homoepitaxial, and heteroepitaxial growth of silicon carbide
(SiC) has witnessed many advances, giving rise to electronic devices widely used in high …

This paper presents an isolated on-board vehicular battery charger that utilizes silicon
carbide (SiC) power devices to achieve high density and high efficiency for application in …

SiC devices are promising for outperforming Si counterparts in high-frequency applications
due to its superior material properties. Conventional wirebonded packaging scheme has …

This paper evaluates the capability of SiC power semiconductor devices, in particular JFET
and Schottky barrier diodes (SBD) for application in high-temperature power electronics. SiC …

A compact circuit simulator model is used to describe the performance of a 2-kV, 5-A 4-H
silicon carbide (SiC) power DiMOSFET and to perform a detailed comparison with the …

A performance comparison of an interleaved boost converter (IBC) using Si and SiC diodes
for photovoltaic (PV) energy conversion systems is presented in this paper. The performance …

A silicon-carbide (SiC)-based dc-dc converter is developed for the solarship, a manned
solar aircraft for supply delivery in remote locations. The concept of differential power …

This paper presents a comparison of the behavior of the intrinsic diode of silicon (Si) and
silicon carbide (SiC) MOSFETs. The study was done for 1200 V Si and SiC MOSFETs. The …