[HTML][HTML] Atomic layer deposition of doped ZnO films
Z Gao, P Banerjee - Journal of Vacuum Science & Technology A, 2019 - pubs.aip.org
This article reviews the process-structure-property relationship in doped ZnO thin films via
atomic layer deposition (ALD). ALD is an important manufacturing-scalable, layer-by-layer …
atomic layer deposition (ALD). ALD is an important manufacturing-scalable, layer-by-layer …
Interaction of an ultrathin zinc surface passivation layer with a room temperature-deposited Al-doped ZnO film leading to highly improved electrical transport properties
In this study, we have demonstrated the interaction of an ultrathin Zn surface passivation
layer with a room temperature (RT)-deposited Al-doped ZnO (AZO) film, leading to highly …
layer with a room temperature (RT)-deposited Al-doped ZnO (AZO) film, leading to highly …
Weak localization effect in Zn1− xCdxO/CdO heterostructures
LMB Vargas, K Bolaños, MJ Da Silva… - Journal of Applied …, 2023 - pubs.aip.org
We present a systematic investigation of the morphological and magnetotransport properties
of Zn 1− x Cd x O/CdO heterostructures managing the electronic barrier by changing x …
of Zn 1− x Cd x O/CdO heterostructures managing the electronic barrier by changing x …
Comparative Analysis of Phase Coherence Length in Polycrystalline CdO Films on Two Distinct Substrates
LMB Vargas, K Bolaños, MJ da Silva, S de Castro… - Thin Solid Films, 2024 - Elsevier
The role of substrates in thin film growth encompasses structural and morphological
characteristics which, as a consequence, can also affect electronic properties. This article …
characteristics which, as a consequence, can also affect electronic properties. This article …
Increased dephasing length in heavily doped GaAs
Ion implantation of S and Te followed by sub-second flash lamp annealing with peak
temperature about 1100 C is employed to obtain metallic n++-GaAs layers. The electron …
temperature about 1100 C is employed to obtain metallic n++-GaAs layers. The electron …
Weak localization and size effects in thin In2O3 films prepared by autowave oxidation
IA Tambasov, AS Tarasov, MN Volochaev… - Physica E: Low …, 2016 - Elsevier
The negative magnetoresistance of thin In 2 O 3 films, obtained by an autowave oxidation
reaction, was detected within a temperature range of 4.2–80 K. The magnetoresistance was …
reaction, was detected within a temperature range of 4.2–80 K. The magnetoresistance was …
Observation of dopant-profile independent electron transport in sub-monolayer TiOx stacked ZnO thin films grown by atomic layer deposition
Dopant-profile independent electron transport has been observed through a combined study
of temperature dependent electrical resistivity and magnetoresistance measurements on a …
of temperature dependent electrical resistivity and magnetoresistance measurements on a …
Weak localization in CdO thin films prepared by sol–gel method
WJ Wang, XJ Xie, JY Liu, KH Gao - Solid State Communications, 2016 - Elsevier
This paper reports the study of the magnetotransport properties of polycrystalline CdO thin
films prepared by the sol–gel method. Both the sheet resistance and electron density as a …
films prepared by the sol–gel method. Both the sheet resistance and electron density as a …
Dimensional crossover of electron weak localization in ZnO/TiOx stacked layers grown by atomic layer deposition
We report on the dimensional crossover of electron weak localization in ZnO/TiO x stacked
layers having well-defined and spatially-localized Ti dopant profiles along film thickness …
layers having well-defined and spatially-localized Ti dopant profiles along film thickness …
Room temperature magneto-transport properties of nanocomposite Fe–In2O3 thin films
IA Tambasov, KO Gornakov, VG Myagkov… - Physica B: Condensed …, 2015 - Elsevier
Abstract A ferromagnetic Fe–In 2 O 3 nanocomposite thin film has been synthesized by the
thermite reaction Fe 2 O 3+ In→ Fe–In 2 O 3. Measurements of the Hall carrier …
thermite reaction Fe 2 O 3+ In→ Fe–In 2 O 3. Measurements of the Hall carrier …