We review theoretical concepts and experimental results on the physics of misfit dislocations in nanocomposite solids with quantum dots (QDs) and nanowires (quantum wires). Special …
This concise and carefully developed text offers a reader friendly guide to the basics of time- resolved spectroscopy with an emphasis on experimental implementation. The authors …
A flux of atoms, molecules, or molecular fragments impinging on a cold substrate will condense to form a thin film, a conformation that is a rich source of topics in materials …
J Bauer, D Schuh, E Uccelli, R Schulz, A Kress… - Applied physics …, 2004 - pubs.aip.org
We report on a promising approach for positioning of self-assembled InAs quantum dots on (110) GaAs with nanometer precision. By combining self-assembly of quantum dots with …
B Yu, J Gao, C Jin, C Xiao, J Wu, H Liu… - Applied Physics …, 2016 - iopscience.iop.org
Defect-free tribochemical removal of gallium arsenide (GaAs) was demonstrated in vacuum, dry air, and various humidity environments by scratching with a SiO 2 tip. The removal depth …
Y Song, M Larry Lee - Applied Physics Letters, 2013 - pubs.aip.org
We report on the growth, structure, and luminescence of In 0.5 Ga 0.5 As/GaP self- assembled quantum dots (SAQDs) on exact Si (001) by means of an epitaxial GaP/Si …
VM Ng, M Xu, SY Huang, JD Long, S Xu - Thin Solid Films, 2006 - Elsevier
SiCN nanoparticle films were grown on an AlN buffered Si (100) substrates by radio frequency magnetron sputtering at low temperature. X-ray diffraction indicated that only …
S Wu, B Son, L Zhang, Q Chen, H Zhou… - Journal of Alloys and …, 2021 - Elsevier
Here, we explore the thermal stability of GeSn epilayers with varying Sn contents (3–10%) at an annealing temperature ranging from 300° to 750° C. It is found that ordered nanopatterns …
RV Kukta, D Kouris - Journal of applied physics, 2005 - pubs.aip.org
A recent approach to fabricating self-assembled epitaxial nanostructures involves the use of topographically patterned substrates to control the formation of material deposits during …