[图书][B] Plasma-aided nanofabrication: from plasma sources to nanoassembly

K Ostrikov, S Xu - 2007 - books.google.com
In this single work to cover the use of plasma as nanofabrication tool in sufficient depth
internationally renowned authors with much experience in this important method of …

Misfit dislocations in nanocomposites with quantum dots, nanowires and their ensembles

IA Ovid'Ko, AG Sheinerman - Advances in Physics, 2006 - Taylor & Francis
We review theoretical concepts and experimental results on the physics of misfit dislocations
in nanocomposite solids with quantum dots (QDs) and nanowires (quantum wires). Special …

[图书][B] Time-resolved spectroscopy: An experimental perspective

T Weinacht, BJ Pearson - 2018 - taylorfrancis.com
This concise and carefully developed text offers a reader friendly guide to the basics of time-
resolved spectroscopy with an emphasis on experimental implementation. The authors …

[图书][B] Materials Science in Microelectronics: The relationship between thin film processing and structure

ES Machlin - 2006 - cambridge.org
A flux of atoms, molecules, or molecular fragments impinging on a cold substrate will
condense to form a thin film, a conformation that is a rich source of topics in materials …

Long-range ordered self-assembled InAs quantum dots epitaxially grown on (110) GaAs

J Bauer, D Schuh, E Uccelli, R Schulz, A Kress… - Applied physics …, 2004 - pubs.aip.org
We report on a promising approach for positioning of self-assembled InAs quantum dots on
(110) GaAs with nanometer precision. By combining self-assembly of quantum dots with …

Humidity effects on tribochemical removal of GaAs surfaces

B Yu, J Gao, C Jin, C Xiao, J Wu, H Liu… - Applied Physics …, 2016 - iopscience.iop.org
Defect-free tribochemical removal of gallium arsenide (GaAs) was demonstrated in vacuum,
dry air, and various humidity environments by scratching with a SiO 2 tip. The removal depth …

InGaAs/GaP quantum dot light-emitting diodes on Si

Y Song, M Larry Lee - Applied Physics Letters, 2013 - pubs.aip.org
We report on the growth, structure, and luminescence of In 0.5 Ga 0.5 As/GaP self-
assembled quantum dots (SAQDs) on exact Si (001) by means of an epitaxial GaP/Si …

Assembly and photoluminescence of SiCN nanoparticles

VM Ng, M Xu, SY Huang, JD Long, S Xu - Thin Solid Films, 2006 - Elsevier
SiCN nanoparticle films were grown on an AlN buffered Si (100) substrates by radio
frequency magnetron sputtering at low temperature. X-ray diffraction indicated that only …

Effects of high-temperature thermal annealing on GeSn thin-film material and photodetector operating at 2 µm

S Wu, B Son, L Zhang, Q Chen, H Zhou… - Journal of Alloys and …, 2021 - Elsevier
Here, we explore the thermal stability of GeSn epilayers with varying Sn contents (3–10%) at
an annealing temperature ranging from 300° to 750° C. It is found that ordered nanopatterns …

On the mechanisms of epitaxial island alignment on patterned substrates

RV Kukta, D Kouris - Journal of applied physics, 2005 - pubs.aip.org
A recent approach to fabricating self-assembled epitaxial nanostructures involves the use of
topographically patterned substrates to control the formation of material deposits during …