The stochastic resonance phenomenon has been studied experimentally and theoretically
for a state-of-art metal-oxide memristive device based on yttria-stabilized zirconium dioxide …

Artificial intelligence (AI) has revolutionized present-day life through automation and
independent decision-making capabilities. For AI hardware implementations, the 6T-SRAM …

The effects of external digitally synthesized Gaussian noise on the resistive state relaxation
time of a ZrO 2 (Y)-based memristive device when switching from a low resistance state to a …

Stochastic resonance is an essential phenomenon in neurobiology, it is connected to the
constructive role of noise in the signals that take place in neuronal tissues, facilitating …

Resistive switching (RS) devices are electronic components which exhibit a resistive state
that can be adjusted to different nonvolatile levels via electrical stressing, fueling the …

Resistance switching devices are of special importance because of their application in
resistive memories (RRAM) which are promising candidates for replacing current nonvolatile …

Recently, researchers have demonstrated multiple-bits-per-cell (MBPC) data storage using
resistive random access memory (RRAM) device technologies. In MBPC storage, a level …

Advances in emerging resistive random-access memory (ReRAM) technology show promise
for its use in future computing systems, enabling neuromorphic and memory-centric …

The beneficial role of noise in the performance of Hf-based memristors has been
experimentally studied. The addition of an external gaussian noise to the bias circuitry …

In this work, we investigate the possibility of controlled tuning the resistive switching of the
Pt/TaO х/Ta 2 O 5/Pt/c-Al 2 O 3 memristors in crossbar geometry by changing the oxygen …