D Caimi, P Tiwari, M Sousa… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
III-V materials, such as InGaAs and InP, are highly attractive for high-performance electronics and optoelectronics owning to their high carrier mobilities and potential for …
In this work, we review progress in III-V transistor technologies. Key approaches for silicon integration are described, with a distinction being made between large area layer transfer …
D Caimi, M Sousa, S Karg, CB Zota - Japanese Journal of …, 2021 - iopscience.iop.org
III–V semiconductors, such as indium-rich InGaAs, are promising as replacements for the Si channel in CMOS technology. In this work, we demonstrate a scaled III–V FinFET …
The work presented in this thesis was performed in the alternative qubits group at IBM Research Europe-Zurich. The results of three projects are presented in the following. In …