Aluminum-rich p-AlGaN electron blocking layers (EBLs) are typically used for preventing
overflow of electrons from the active region in AlGaN-based deep ultraviolet (DUV) laser …

A deep ultraviolet (DUV) laser diode is a compact and efficient semiconductor device that
emits laser light in the deep ultraviolet range. Its unique properties make it suitable for a …

The undoped BAlN electron-blocking layer (EBL) is investigated to replace the conventional
AlGaN EBL in light-emitting diodes (LEDs). Numerical studies of the impact of variously …

P-AlGaN EBLs are usually used to control the overflow of electrons from the multiple
quantum wells (MQWs) in AlGaN-based deep ultraviolet (DUV) edge-emitting laser diodes …

To understand the mechanism of Gallium nitride (GaN) film growth is of great importance for
their potential applications. In this paper, we investigate the growth behavior of the GaN film …

A light emitting device includes a first semiconductor layer having a first conductive dopant,
an active layer on the first semiconductor layer, an electron blocking layer on the active …

制备了具有高量子效率的发光二极管(LED) 器件. 对于LED 光电器件提高辐射复合速率有利于
缓解电子泄露, 增加了LED 的发光功率, 缓解了LED 在大电流下的效率下降问题 …

Understanding the property of defect-containing Gallium nitride (GaN) crystal at the
molecular level can be very helpful for its potential applications. In this paper, we study the …

The thermal-electrical characteristic of a GaN light-emitting diode (LED) with the hybrid
transparent conductive layers (TCLs) of graphene (Gr) and NiO x is investigated by a finite …

InGaN/AlInGaN superlattice (SL) is designed as the electron blocking layer (EBL) of an
InGaN/GaN-based light-emitting diode (LED). The energy band structure, polarization field …