Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

E Tournié, L Monge Bartolome, M Rio Calvo… - Light: Science & …, 2022 - nature.com
There is currently much activity toward the integration of mid-infrared semiconductor lasers
on Si substrates for developing a variety of smart, compact, sensors based on Si-photonics …

Interfacial engineering of halide perovskites and two-dimensional materials

L Qiu, G Si, X Bao, J Liu, M Guan, Y Wu, X Qi… - Chemical Society …, 2023 - pubs.rsc.org
Recently, halide perovskites (HPs) and layered two-dimensional (2D) materials have
received significant attention from industry and academia alike. HPs are emerging materials …

Novel two-dimensional AlSb and InSb monolayers with a double-layer honeycomb structure: a first-principles study

A Bafekry, M Faraji, MM Fadlallah, HR Jappor… - Physical Chemistry …, 2021 - pubs.rsc.org
In this work, motivated by the fabrication of an AlSb monolayer, we have focused on the
electronic, mechanical and optical properties of AlSb and InSb monolayers with double …

Dodecagonal Zinc Oxide (-) Monolayer for Water Desalination and Detection of Toxic Gases

YZ Abdullahi, A Tigli, F Ersan - Physical Review Applied, 2023 - APS
Nanoporous materials have attracted great interest because of their variety of applications in
nanodevices, such as gas storage, low-density magnetic storage, energy storage …

Crystal phase control during epitaxial hybridization of III‐V semiconductors with silicon

M Rio Calvo, JB Rodriguez, C Cornet… - Advanced Electronic …, 2022 - Wiley Online Library
The formation and propagation of anti‐phase boundaries (APBs) in the epitaxial growth of III‐
V semiconductors on Silicon is still the subject of great debate, despite the impressive …

Realization of AlSb in the double-layer honeycomb structure: A robust class of two-dimensional material

L Qin, ZH Zhang, Z Jiang, K Fan, WH Zhang, QY Tang… - ACS …, 2021 - ACS Publications
Exploring two-dimensional (2D) van der Waals (vdW) systems is at the forefront of materials
of physics. Here, through molecular beam epitaxy on graphene-covered SiC (0001), we …

Epitaxial Growth of III‐Vs on On‐Axis Si: Breaking the Symmetry for Antiphase Domains Control and Burying

A Gilbert, M Ramonda, L Cerutti… - Advanced Optical …, 2023 - Wiley Online Library
This work reports on the precise control of III‐V semiconductors' antiphase domain formation
and evolution during the epitaxial growth on an “on‐axis” Si (001) substrate with a very low …

Zinc-blende group III-V/group IV epitaxy: Importance of the miscut

C Cornet, S Charbonnier, I Lucci, L Chen… - Physical Review …, 2020 - APS
Here we clarify the central role of the miscut during group III-V/group IV crystal growth. We
show that the miscut impacts the initial antiphase domain distribution, with two distinct …

Bottom-up, chip-scale engineering of low threshold, multi-quantum-well microring lasers

WW Wong, N Wang, BD Esser, SA Church, L Li… - ACS …, 2023 - ACS Publications
Integrated, on-chip lasers are vital building blocks in future optoelectronic and nanophotonic
circuitry. Specifically, III–V materials that are of technological relevance have attracted …

Epitaxial III–V/Si Vertical Heterostructures with Hybrid 2D‐Semimetal/Semiconductor Ambipolar and Photoactive Properties

L Chen, Y Léger, G Loget, M Piriyev, I Jadli… - Advanced …, 2022 - Wiley Online Library
Hybrid materials taking advantage of the different physical properties of materials are highly
attractive for numerous applications in today's science and technology. Here, it is …