The memristor is a resistive switch where its resistive state is programable based on the
applied voltage or current. Memristive devices are thus capable of storing and computing …

The introduction of the concept of topology into condensed matter physics has greatly
deepened our fundamental understanding of transport properties of electrons as well as all …

The absence of two-dimensional (2D) van der Waals (vdW) ferromagnetic crystals with both
above-room-temperature strong intrinsic ferromagnetism and large perpendicular magnetic …

Summary Spin-orbit-torque (SOT)-driven perpendicular magnetization switching has
attracted great attention for designing energy-efficient, high-density, and thermal-stable …

Giant spin–orbit torque (SOT) from topological insulators (TIs) has great potential for low‐
power SOT‐driven magnetic random‐access memory (SOT‐MRAM). In this work, a …

Current-induced magnetic switching via spin–orbit torques has been extensively pursued for
memory and logic applications with promising energy efficiency. Topological insulators are a …

The building block of in-memory computing with spintronic devices is mainly based on the
magnetic tunnel junction with perpendicular interfacial anisotropy (p-MTJ). The resulting …

Along with the progress of spin science and spintronics research, the flow of electron spins,
ie, spin current, has attracted interest. New phenomena and electronic states were …

Over the past decade, 2D van der Waals (vdW) topological materials (TMs), including
topological insulators and topological semimetals, which combine atomically flat 2D layers …

In recent years, magnetic RAMs have stimulated considerable research interest due to its
high area-density and low leakage-power with comparable speed that makes it a strong …