In this paper, a 2D analytical model for the Dual Material Surrounding Gate MOSFET
(DMSG) by solving the Poisson equation has been proposed and verified using ATLAS …

Thanks to bonding, metal-gate etching without any out-of-gate Si consumption, and self-
aligned transfer of alignment marks, we have processed the first 10-nm-gate-length DG MOS …

Using a novel process flow, we managed to cointegrate several devices on the same wafer;
single gate (SG), ground plane (GP), perfectly aligned double gate (DG), misaligned DG and …

An analytical model of CGAA MOSFET incorporating material engineering, channel
engineering and stack engineering has been proposed and verified using ATLAS 3D device …

FinFETs have emerged as alternatives to conventional bulk MOSFETs in scaled
technologies due to superior gate control of the channel, lower short channel effects and …

In this paper, for the first time, we present a detailed RF experimental and simulation study of
a 3-D multichannel SOI MOSFET (MCFET). Being different from the conventional planar …

While device scaling is entering the sub-20nm regime, multiple gate transistors are needed
to fulfill the ITRS requirements, since they offer a greatly improved electrostatic control of the …

Low frequency noise in Fully Depleted and Double Gate SOI-MOSFETs has been studied
and compared for different front and back-gate voltages with special emphasis on the …

Dans les transistors MOS (Métal Oxyde Semiconducteur) fortement submicroniques (< 100
nm), l'augmentation de la densité d'intégration des composants s' accompagne d'une …

Nanotechnology starts at the substrate level. Engineered substrate is one of the most
important innovations of the nanotechnology era driven by the vanishing boundary between …