Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review
This article critically reviews the architectural novelties, emerging materials (substrate,
buffer, barrier & contact materials), technological advancements, processing techniques …
buffer, barrier & contact materials), technological advancements, processing techniques …
A GaN–SiC hybrid material for high-frequency and power electronics
We demonstrate that 3.5% in-plane lattice mismatch between GaN (0001) epitaxial layers
and SiC (0001) substrates can be accommodated without triggering extended defects over …
and SiC (0001) substrates can be accommodated without triggering extended defects over …
Microwave performance of 'buffer-free'GaN-on-SiC high electron mobility transistors
DY Chen, A Malmros, M Thorsell… - IEEE Electron …, 2020 - ieeexplore.ieee.org
High performance microwave GaN-on-SiC HEMTs are demonstrated on a heterostructure
without a conventional thick doped buffer. The HEMT is fabricated on a high-quality 0.25 μm …
without a conventional thick doped buffer. The HEMT is fabricated on a high-quality 0.25 μm …
Electron trapping in extended defects in microwave AlGaN/GaN HEMTs with carbon-doped buffers
This paper investigates AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated on
epistructures with carbon (C)-doped buffers. Metalorganic chemical vapor deposition is used …
epistructures with carbon (C)-doped buffers. Metalorganic chemical vapor deposition is used …
[HTML][HTML] LG= 50 nm T-gated and Fe-doped double quantum well GaN‒HEMT on SiC wafer with graded AlGaN barrier for future power electronics applications
High-performance LG= 50 nm graded double-channel (GDC)-HEMT featuring AlN top
barrier, recessed T-gate and graded-AlGaN bottom barrier is designed and investigated …
barrier, recessed T-gate and graded-AlGaN bottom barrier is designed and investigated …
A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs
YK Lin, J Bergsten, H Leong, A Malmros… - Semiconductor …, 2018 - iopscience.iop.org
Deeply recessed ohmic contacts for GaN-based high electron mobility transistors (HEMTs)
are demonstrated. It is shown that low-resistance ohmic contacts can be achieved with …
are demonstrated. It is shown that low-resistance ohmic contacts can be achieved with …
High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer
Y Feng, H Sun, X Yang, K Liu, J Zhang, J Shen… - Applied Physics …, 2021 - pubs.aip.org
High quality GaN films on SiC with low thermal boundary resistance (TBR) are achieved by
employing an ultrathin low Al content AlGaN buffer layer. Compared with the conventional …
employing an ultrathin low Al content AlGaN buffer layer. Compared with the conventional …
Reliability Assessment of On-Wafer AlGaN/GaN HEMTs: The Impact of Electric Field Stress on the Mean Time to Failure
S Chakraborty, TW Kim - Micromachines, 2023 - mdpi.com
We present the mean time to failure (MTTF) of on-wafer AlGaN/GaN HEMTs under two
distinct electric field stress conditions. The channel temperature (Tch) of the devices exhibits …
distinct electric field stress conditions. The channel temperature (Tch) of the devices exhibits …
Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization
This study presents a novel approach to forming low-resistance ohmic contacts for
AlGaN/GaN HEMTs. The optimized contacts exhibit an outstanding contact resistance of …
AlGaN/GaN HEMTs. The optimized contacts exhibit an outstanding contact resistance of …
Study of low noise with high linearity AlGaN/GaN HEMTs by optimizing Γ-Gate structure for Ka-Band applications
CW Hsu, YC Lin, CH Yang… - ECS Journal of Solid State …, 2023 - iopscience.iop.org
This paper investigates the device noise and linearity of an AlGaN/GaN HEMT with an
optimized Γ-Gate structure for Ka-band applications. The Γ-Gate was used to provide low …
optimized Γ-Gate structure for Ka-band applications. The Γ-Gate was used to provide low …