In this work, we will give an overview of the innovations in materials and new device
concepts that will be needed to continue Moore's law to the sub-10 nm technology nodes. To …

InGaAs homojunction Tunnel FET devices are demonstrated with sub-60 mV/dec Sub-
threshold Swing (SS) measured in DC. A 54 mV/dec SS is achieved at 100 pA/μm over a …

The advancements in semiconductor technology greatly impact the growth of hybrid VLSI
devices and components. The nanometer technology has been possibly executed due to the …

The tunnel-FET (TFET) is a promising candidate for future low-power logic applications,
because it enables a sub-60-mV/decadesubthresholdswing. However, themost …

A compact analytical drain current model considering the inversion layer and source
depletion is developed for the gate-all-around (GAA) heterojunction tunneling FET (H-TFET) …

InGaAs planar TFETs with 70% In content are fabricated and characterized. The increase of
the In content of the 8 nm channel from 53% to 70% is found to significantly boost the …

The effective bandgap for heterojunction band-to-band tunneling (E g, eff) is a crucial design
parameter for a heterojunction tunneling FET (TFET). However, there is significant …

We study the positive bias temperature instability (PBTI) of InGaAs tunnel-FETs (TFETs) with
two different indium fractions (53% and 70%) and compare with reference MOSFETs, using …

Certain GeSn alloys are group IV direct bandgap semiconductors with prospects for
electrical and optoelectronical applications. In this letter, we report on the temperature …

The tunnel field-effect transistor (TFET) is a semiconductor device aimed at low-power logic
applications that employs band-to-band tunneling (BTBT) as a carrier injection mechanism …