This paper furnishes a Comprehensive study about an emerging GaN HEMT technology
suitable for RF and high power applications. It plays a vital role in Wireless communication …

Four leaders in the field of microwave circuit design share their newest insights into the
latest aspects of the technology The third edition of Microwave Circuit Design Using Linear …

A surface potential (SP)-based analytical model for intrinsic charges in AlGaN/GaN high
electron mobility transistor devices is presented. We have developed a precise analytical …

In the past few decades, circuits based on gallium nitride high electron mobility transistor
(GaN HEMT) have demonstrated exceptional potential in a wide range of high-power and …

Accurate modeling of electrothermal effects of GaN electronic devices is critical for reliability
design and assessment. In this paper, an electrothermal model for large signal equivalent …

In this paper we present a physics-based compact model for drain current Id and intrinsic
gate–drain and gate–source capacitances CGS and CGD in AlGaN/GaN high electron …

This paper presents an enhanced, closed-form expression for the thermal resistance, and
thus, the channel temperature of AlGaN/gallium nitride (GaN) HEMTs, including the effect of …

In this paper, a surface-potential-based (SP-based) model for AlGaN/GaN modulation-
doped field-effect transistors (MODFETs) is built for the first time. First, a closed-form …

This paper presents physics-based compact models for the CV and IV characteristics of
AlGaN/GaN HEMT devices. The contribution of only the first energy level in the triangular …

As GaN technology has developed, first in research laboratories and more recently in
multiple commercial device manufacturers, the demand for improved nonlinear models has …