A Vasjanov, V Barzdenas - Electronics, 2018 - mdpi.com
The structure of the modern wireless network evolves rapidly and maturing 4G networks pave the way to next generation 5G communication. A tendency of shifting from traditional …
Orthogonal frequency division multiplexing (OFDM) is an efficient multi-carrier modulation technique that underlies most of the current and probably future high-speed wireless …
J Moron, R Leblanc, F Lecourt… - 2018 IEEE/MTT-S …, 2018 - ieeexplore.ieee.org
This paper presents the design and test results of a 40 GHz power amplifier MMIC fabricated with a Gallium Nitride on Silicon (GaN/Si) millimeter wave foundry process. This circuit …
A compact wideband Ka-band monolithic microwave/millimeter-wave integrated circuit (MMIC) power amplifier (PA) is demonstrated using a 0.15-μm pseudomorphic high electron …
Y Ma, G Crupi, J Cai, C Yu, S Chen… - International Journal of …, 2024 - Wiley Online Library
In this paper, an optimization technique based on the particle swarm optimization (PSO) algorithm is applied to the eXtreme gradient boosting (XGBoost) method for load modulated …
C Lu, M Kim, C Zhang, CM Hu - Journal of Applied Physics, 2024 - pubs.aip.org
In this paper, we present the design and performance evaluation of a prototype device based on gain-driven polariton, which can function as an amplifier. This device can …
HD Lee, S Kong, S Jang, KS Kim… - 2019 14th European …, 2019 - ieeexplore.ieee.org
This paper presents a miniaturized 28-GHz FEM implemented in 0.15-μm InGaAs/GaAs E- mode pHEMT process. It is designed for use with 28-GHz switching beamforming systems …
AME Abounemra - 2023 International Microwave and Antenna …, 2023 - ieeexplore.ieee.org
In this paper a 150 nm GaN on Si technology design-based Ka-band monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) for 5G front-end wireless systems is …
HD Lee, J Park, S Kong, KS Kim, KC Lee… - Microwave and …, 2019 - Wiley Online Library
This article presents a 1‐W Ka‐band power amplifier using 0.15‐μm InGaAs/GaAs enhancement‐mode pHEMT technology. We have introduced a method to obtain the …