Synthesis and applications of III–V nanowires

E Barrigón, M Heurlin, Z Bi, B Monemar… - Chemical …, 2019 - ACS Publications
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

Recent advances in light sources on silicon

Y Han, H Park, J Bowers, KM Lau - Advances in Optics and Photonics, 2022 - opg.optica.org
Realizing efficient on-chip light sources has long been the “holy-grail” for Si-photonics
research. Several important breakthroughs were made in this field in the past few years. In …

Room-temperature InP distributed feedback laser array directly grown on silicon

Z Wang, B Tian, M Pantouvaki, W Guo, P Absil… - Nature …, 2015 - nature.com
Fully exploiting the silicon photonics platform for large-volume, cost-sensitive applications
requires a fundamentally new approach to directly integrate high-performance laser sources …

Photonic integration with epitaxial III–V on silicon

AY Liu, J Bowers - IEEE Journal of Selected Topics in Quantum …, 2018 - ieeexplore.ieee.org
We present a brief overview of the various leading platforms for photonic integration.
Subsequently, we consider the possibility of a photonic integrated circuit platform utilizing …

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Q Li, KM Lau - Progress in Crystal Growth and Characterization of …, 2017 - Elsevier
Monolithic integration of III-V on silicon has been a scientifically appealing concept for
decades. Notable progress has recently been made in this research area, fueled by …

Bufferless 1.5 µm III-V lasers grown on Si-photonics 220 nm silicon-on-insulator platforms

Y Han, Z Yan, WK Ng, Y Xue, KS Wong, KM Lau - Optica, 2020 - opg.optica.org
Efficient III-V lasers directly grown on Si remain the “holy grail” for present Si-photonics
research. In particular, a bufferless III-V laser grown on the Si-photonics 220 nm silicon-on …

Doping challenges and pathways to industrial scalability of III–V nanowire arrays

W Kim, L Güniat, A Fontcuberta i Morral… - Applied Physics …, 2021 - pubs.aip.org
Semiconductor nanowires (NWs) have been investigated for decades, but their application
into commercial products is still difficult to achieve, with triggering causes related to the …

III–V/Ge channel MOS device technologies in nano CMOS era

S Takagi, R Zhang, J Suh, SH Kim… - Japanese Journal of …, 2015 - iopscience.iop.org
CMOS utilizing high-mobility III–V/Ge channels on Si substrates is expected to be one of the
promising devices for high-performance and low power advanced LSIs in the future …

Ultrathin multibridge channel transistor enabled by van der Waals assembly

X Huang, C Liu, S Zeng, Z Tang, S Wang… - Advanced …, 2021 - Wiley Online Library
Multibridge channel field‐effect transistors (MBCFETs) enable improved gate control and
flow of a large drive current and they are regarded as promising candidates for next …

Confined epitaxial lateral overgrowth (CELO): A novel concept for scalable integration of CMOS-compatible InGaAs-on-insulator MOSFETs on large-area Si substrates

L Czornomaz, E Uccelli, M Sousa… - 2015 Symposium on …, 2015 - ieeexplore.ieee.org
We report on the first demonstration of the CMOS-compatible integration of high-quality
InGaAs on insulator (InGaAs-OI) on Si substrates by a novel concept named Confined …