Determination of the optical parameters of a-Si: H thin films deposited by hot wire–chemical vapour deposition technique using transmission spectrum only

NA Bakr, AM Funde, VS Waman, MM Kamble… - Pramana, 2011 - Springer
Three demonstration samples of intrinsic hydrogenated amorphous silicon (a-Si: H) films
were deposited using hot wire–chemical vapour deposition (HW–CVD) technique. The …

Improved rate capability of Si–C composite anodes by boron doping for lithium-ion batteries

R Yi, J Zai, F Dai, ML Gordin, D Wang - Electrochemistry communications, 2013 - Elsevier
We report a novel strategy to enhance the rate capability of Si–C composite by facile boron
doping. Boron doping was confirmed by X-ray powder diffraction (XRD), X-ray photoelectron …

Phosphoric acid induced homogeneous crosslinked phosphorus doped porous Si nanoparticles with superior lithium storage performance

J Zhang, X Zhou, J Tang, Y Ren, M Jiang, Y Tang… - Applied Surface …, 2020 - Elsevier
The high volume expansion and low electrical conductivity issues severely limit practical
application of Si-based materials for Li ion batteries (LIBs). Here we prepare the …

Effects of high hydrogen dilution on the optical and electrical properties in B-doped nc-Si: H thin films

H Chen, MH Gullanar, WZ Shen - Journal of Crystal Growth, 2004 - Elsevier
We report on the effects of high hydrogen dilution on the optical (refractive index, absorption
coefficient and band gap) and electrical (carrier concentration, Hall mobility and dark …

Electrophysiological evidence for the continuous processing of linguistic categories of regular and irregular verb inflection in German

E Smolka, PH Khader, R Wiese… - Journal of Cognitive …, 2013 - direct.mit.edu
A central question concerning word recognition is whether linguistic categories are
processed in continuous or categorical ways, in particular, whether regular and irregular …

Highly conductive boron doped micro/nanocrystalline silicon thin films deposited by VHF-PECVD for solar cell applications

S Juneja, S Sudhakar, J Gope, K Lodhi… - Journal of Alloys and …, 2015 - Elsevier
Boron doped hydrogenated micro/nanocrystalline silicon (μc/nc-Si: H) thin films have been
deposited by plasma enhanced chemical vapor deposition technique (PECVD) using silane …

Electrically active boron doping in the core of Si nanocrystals by planar inductively coupled plasma CVD

C Patra, D Das - Journal of Applied Physics, 2019 - pubs.aip.org
An improvement in the doping efficiency in p-type nc-Si: H, a two-phase structure consisting
of Si-nanocrystallites embedded in an amorphous matrix, has been pursued via low …

Characterization of silicon oxynitride thin films deposited by electron beam physical vapor deposition technique

KC Mohite, YB Khollam, AB Mandale, KR Patil… - Materials Letters, 2003 - Elsevier
Thin films of silicon oxynitride (SiOxNy) were deposited successfully on silicon wafer
substrates using electron beam physical vapor deposition (EB-PVD) technique by varying …

Structural and optical properties of phosphorous doped nanocrystalline silicon deposited using a VHF PECVD process for silicon heterojunction solar cells and …

VK Gill, S Juneja, SK Dixit, S Vashist, S Kumar - RSC advances, 2024 - pubs.rsc.org
Initially hydrogenated silicon (Si: H) thin films have been deposited using a plasma-
enhanced chemical vapor deposition technique (PECVD) using silane (SiH4) as a precursor …

Highly conductive microcrystalline silicon carbide films deposited by the hot wire cell method and its application to amorphous silicon solar cells

S Miyajima, A Yamada, M Konagai - Thin Solid Films, 2003 - Elsevier
Microcrystalline silicon carbide (μc-Si1− xCx) films were successfully deposited by the hot
wire cell method using a gas mixture of SiH4, H2 and C2H2. It was confirmed by Fourier …