Germanium CMOS potential from material and process perspectives: Be more positive about germanium
A Toriumi, T Nishimura - Japanese Journal of Applied Physics, 2017 - iopscience.iop.org
CMOS miniaturization is now approaching the sub-10 nm level, and further downscaling is
expected. This size scaling will end sooner or later, however, because the typical size is …
expected. This size scaling will end sooner or later, however, because the typical size is …
Emerging applications for high K materials in VLSI technology
RD Clark - Materials, 2014 - mdpi.com
The current status of High K dielectrics in Very Large Scale Integrated circuit (VLSI)
manufacturing for leading edge Dynamic Random Access Memory (DRAM) and …
manufacturing for leading edge Dynamic Random Access Memory (DRAM) and …
Germanium surface passivation and atomic layer deposition of high-k dielectrics—a tutorial review on Ge-based MOS capacitors
Due to its high intrinsic mobility, germanium (Ge) is a promising candidate as a channel
material (offering a mobility gain of approximately× 2 for electrons and× 4 for holes when …
material (offering a mobility gain of approximately× 2 for electrons and× 4 for holes when …
III–V/Ge channel MOS device technologies in nano CMOS era
CMOS utilizing high-mobility III–V/Ge channels on Si substrates is expected to be one of the
promising devices for high-performance and low power advanced LSIs in the future …
promising devices for high-performance and low power advanced LSIs in the future …
7-nm FinFET CMOS design enabled by stress engineering using Si, Ge, and Sn
S Gupta, V Moroz, L Smith, Q Lu… - IEEE transactions on …, 2014 - ieeexplore.ieee.org
Bandgap and stress engineering using group IV materials-Si, Ge, and Sn, and their alloys
are employed to design a FinFET-based CMOS solution for the 7-nm technology node and …
are employed to design a FinFET-based CMOS solution for the 7-nm technology node and …
High mobility CMOS technologies using III–V/Ge channels on Si platform
MOSFETs using channel materials with high mobility and low effective mass have been
regarded as strongly important for obtaining high current drive and low supply voltage …
regarded as strongly important for obtaining high current drive and low supply voltage …
[图书][B] Metrology and Diagnostic Techniques for Nanoelectronics
Z Ma, DG Seiler - 2017 - taylorfrancis.com
Nanoelectronics is changing the way the world communicates, and is transforming our daily
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …
High carrier mobility in orientation-controlled large-grain (≥ 50 μm) Ge directly formed on flexible plastic by nucleation-controlled gold-induced-crystallization
High-carrier-mobility semiconductors on flexible-plastic are essential to realize flexible
electronics. For this purpose, electrical properties of orientation-controlled large-grain Ge …
electronics. For this purpose, electrical properties of orientation-controlled large-grain Ge …
New materials for post-Si computing: Ge and GeSn devices
As Si-transistor technology advances beyond the 10 nm node, the device research
community is increasingly looking into the possibility of replacing Si with novel, high mobility …
community is increasingly looking into the possibility of replacing Si with novel, high mobility …
Understanding and controlling band alignment at the metal/germanium interface for future electric devices
T Nishimura - Electronics, 2022 - mdpi.com
Germanium (Ge) is a promising semiconductor as an alternative channel material to
enhance performance in scaled silicon (Si) field-effect transistor (FET) devices. The gate …
enhance performance in scaled silicon (Si) field-effect transistor (FET) devices. The gate …