The electrical resistance of interconnect wires increases with decreasing size, causing
signal delay and energy consumption that limits further downscaling of integrated circuits …

Integrated circuits (ICs) are challenged to deliver historically anticipated performance
improvements while increasing the cost and complexity of the technology with each …

Interconnect resistance and reliability have emerged as critical factors limiting the
performance of advanced CMOS circuits. With the slowdown of transistor scaling …

Intermetallic compounds have been proposed as potential interconnect materials for
advanced semiconductor devices. This study reports the interdiffusion reliability and …

The potential of a wide range of layered ternary carbide and nitride Mn+ 1AXn [an early
transition metal (M), an element of columns 13 or 14 of the periodic table (A), and either C or …

Al x Sc 1-x thin films have been studied with compositions around Al 3 Sc (x= 0.75) for
potential interconnect metallization applications. As-deposited 25 nm thick films were x-ray …

Positron annihilation and atom probe tomography were used to study vacancy-type defects
and their interaction with oxygen in 100 nm thick Ni x Al1–x deposited on a SiO2/Si …

Materials with low resistivity in small dimensions are urgently desired to replace Cu for
highly scaled interconnection in advanced integrated circuits. This study reports the …

Intermetallic compounds with good thermal stability and low electrical resistivity have
opened up a new field of application as interconnect materials in advanced electronic …

This paper reports the results of a materials study on co-sputtered CoAl thin films for
interconnect applications based on both experiments and computations. We modulate the …