[HTML][HTML] Ferroelectric field effect transistors: Progress and perspective
Ferroelectric field effect transistors (FeFETs) have attracted attention as next-generation
devices as they can serve as a synaptic device for neuromorphic implementation and a one …
devices as they can serve as a synaptic device for neuromorphic implementation and a one …
Ferroelectric field effect transistors (FeFETs): advancements, challenges and exciting prospects for next generation non-volatile memory (NVM) applications
Data intensive applications such as AI (Artificial Intelligence) and IoT (Internet of Things)
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …
Nanowire-based synaptic devices for neuromorphic computing
The traditional von Neumann structure computers cannot meet the demands of high-speed
big data processing; therefore, neuromorphic computing has received a lot of interest in …
big data processing; therefore, neuromorphic computing has received a lot of interest in …
[图书][B] Encyclopedia of Polymer Applications, 3 Volume Set
M Mishra - 2018 - taylorfrancis.com
Undoubtedly the applications of polymers are rapidly evolving. Technology is continually
changing and quickly advancing as polymers are needed to solve a variety of day-to-day …
changing and quickly advancing as polymers are needed to solve a variety of day-to-day …
Reduced asymmetric memory window between Si-based n-and p-FeFETs with scaled ferroelectric HfZrOₓ and AlON interfacial layer
The Si-based n-and p-FeFET with 5-nm ferroelectric (FE) HfZrO x (HZO) and high-k AlON
interfacial layer (IL) were fabricated for the comparison of memory characteristics and …
interfacial layer (IL) were fabricated for the comparison of memory characteristics and …
In2O3 Nanowire Field-Effect Transistors with Sub-60 mV/dec Subthreshold Swing Stemming from Negative Capacitance and Their Logic Applications
Heat dissipation is a key issue for scaling metal-oxide-semiconductor field-effect transistors
(MOSFETs). The Boltzmann distribution of electrons imposes a physical limit on the …
(MOSFETs). The Boltzmann distribution of electrons imposes a physical limit on the …
[HTML][HTML] Brain-inspired ferroelectric Si nanowire synaptic device
We herein demonstrate a brain-inspired synaptic device using a poly (vinylidene fluoride)
and trifluoroethylene (PVDF-TrFE)/silicon nanowire (Si NW) based ferroelectric field effect …
and trifluoroethylene (PVDF-TrFE)/silicon nanowire (Si NW) based ferroelectric field effect …
Carbon nanotube ferroelectric random access memory cell based on omega-shaped ferroelectric gate
This paper presents a flexible ferroelectric random access memory (FeRAM) cell with a one-
transistor-one-transistor structure. The FeRAM cell was composed of a control transistor (CT) …
transistor-one-transistor structure. The FeRAM cell was composed of a control transistor (CT) …
High Mobility Flexible Ferroelectric Organic Transistor Nonvolatile Memory With an Ultrathin Interfacial Layer
M Xu, S Guo, L Xiang, T Xu, W Xie… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
The low mobility is a primary issue to prevent the practical application of the ferroelectric
organic field-effect transistor (Fe-OFET) nonvolatile memory (NVM). In this paper, we …
organic field-effect transistor (Fe-OFET) nonvolatile memory (NVM). In this paper, we …
Amine and Thiol Cofunctionalized Reduced Graphene Oxide Field-Effect Transistor for the Selective Detection of Formaldehyde
This work presents a field-effect transistor-based sensor for the detection of formaldehyde.
Amine and thiol cofunctionalized reduced graphene oxide sheets are used as the sensing …
Amine and thiol cofunctionalized reduced graphene oxide sheets are used as the sensing …