Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …

Modern computers are based on the von Neumann architecture in which computation and
storage are physically separated: data are fetched from the memory unit, shuttled to the …

This article provides a review of current development and challenges in brain-inspired
computing with memristors. We review the mechanisms of various memristive devices that …

Emerging nonvolatile memory (eNVM) devices are pushing the limits of emerging
applications beyond the scope of silicon-based complementary metal oxide semiconductors …

At the end of a rush lasting over half a century, in which CMOS technology has been
experiencing a constant and breathtaking increase of device speed and density, Moore's …

This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

This review article attempts to provide a comprehensive review of the recent progress in the
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …

With its comprehensive coverage, this reference introduces readers to the wide topic of
resistance switching, providing the knowledge, tools, and methods needed to understand …

Memristive devices are electrical resistance switches that can retain a state of internal
resistance based on the history of applied voltage and current. These devices can store and …

Non-volatile memory (NVM) will play a decisive role in the development of the next-
generation of electronic products. Therefore, the development of next-generation NVM is …