In this review, the application of light ion irradiation is discussed for tailoring novel functional
materials and for improving the performance in SiC or Si based electrical power devices …

This paper gives an overview of the physics and electrical characteristics of irradiation-
induced defects in silicon created by electrons, protons, and helium ions. The parameters of …

The irradiation with high-energy (7.35 MeV) protons through a set of energy degraders was
used to suppress leakage of the silicon power diodes subjected to local lifetime control. The …

Dark Current Spectroscopy is tested for the first time on irradiated CMOS Image sensors
(CIS) to detect and identify radiation-induced silicon bulk defects. Two different pinned …

The impact of local lifetime control by 1H+ and 4He2+ irradiation on blocking characteristics
of power P–i–N diodes was studied in the dose range up to 5× 1012cm− 2. Energies and …

Characteristics of Si p+ n diodes with non-uniformly distributed compensating defects, which
were introduced by implantation with Xe23+ ions, have been studied. The layer with the …

Current transient spectroscopy (CTS) using high relaxation voltages up to 1 kV is shown to
be an effective tool for non-destructive characterization of radiation defect profiles in silicon …

The formation of defects modifying the effective doping concentration of helium-radiated p+–
n−–n+ and p+–p−–n+ silicon diodes is analyzed as a function of the annealing temperature …

The distribution of recombination centers induced in Si epi-substrates by helium (He)
implantation is obtained for the first time by direct measurement of local recombination …

The combination of emitter control with local lifetime tailoring by ion irradiation is
experimentally analyzed in fast-recovery high power diodes. For this purpose, the carrier …