A first-principles understanding of point defects and impurities in GaN
JL Lyons, D Wickramaratne… - Journal of Applied …, 2021 - pubs.aip.org
Attaining control over the electrical conductivity of gallium nitride through impurity doping is
one of the foremost achievements in semiconductor science. Yet, unwanted contaminants …
one of the foremost achievements in semiconductor science. Yet, unwanted contaminants …
Optical transitions of neutral Mg in Mg-doped β-Ga2O3
Gallium oxide when doped with Mg becomes semi-insulating and can be useful for power
electronic devices. The present work investigates optical transitions of neutral Mg ( M g G a …
electronic devices. The present work investigates optical transitions of neutral Mg ( M g G a …
Shallow and deep states of beryllium acceptor in GaN: Why photoluminescence experiments do not reveal small polarons for defects in semiconductors
Currently, only one shallow acceptor (Mg) has been discovered in GaN. Here, using
photoluminescence (PL) measurements combined with hybrid density functional theory, we …
photoluminescence (PL) measurements combined with hybrid density functional theory, we …
[HTML][HTML] Optical transitions for impurities in Ga2O3 as determined by photo-induced electron paramagnetic resonance spectroscopy
S Bhandari, ME Zvanut - Journal of Applied Physics, 2020 - pubs.aip.org
Impurities such as Fe and Mg are intentionally incorporated into Ga 2 O 3 to control the
intrinsic n-type conductivity. This work examines the defect level of the intentional and …
intrinsic n-type conductivity. This work examines the defect level of the intentional and …
The Origin of the Yellow Luminescence Band in Be-Doped Bulk GaN
MA Reshchikov, M Bockowski - Solids, 2024 - mdpi.com
Photoluminescence (PL) from Be-doped bulk GaN crystals grown by the High Nitrogen
Pressure Solution method was studied and compared with PL from GaN: Be layers on …
Pressure Solution method was studied and compared with PL from GaN: Be layers on …
Direct evidence of Be as an amphoteric dopant in GaN
The interest in Be as an impurity in GaN stems from the challenge to understand why GaN
can be doped p type with Mg, while this does not work for Be. While theory has actually …
can be doped p type with Mg, while this does not work for Be. While theory has actually …
Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors
K Hwang, BD Schultz, J Logan, C Thomidis - US Patent 11,101,378, 2021 - Google Patents
An Enhancement-Mode HEMT having a gate electrode with a doped, Group III-N material
disposed between an electri cally conductive gate electrode contact and a gate region of the …
disposed between an electri cally conductive gate electrode contact and a gate region of the …
Defect properties determined by photo-induced electron paramagnetic resonance spectroscopy in carbon-doped gallium nitride substrates
S Paudel - 2022 - search.proquest.com
GaN is being investigated as active material in light-emitting diodes and high electron
mobility transistors. Recently, it has attracted researchers' attention for high-power …
mobility transistors. Recently, it has attracted researchers' attention for high-power …
Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors
K Hwang, BD Schultz, J Logan, C Thomidis - US Patent 11,594,627, 2023 - Google Patents
An Enhancement-Mode HEMT having a gate electrode with a doped, Group III-N material
disposed between an electrically conductive gate electrode contact and a gate region of the …
disposed between an electrically conductive gate electrode contact and a gate region of the …