Surface phonon polaritons (SPhPs) are attractive alternatives to infrared plasmonics for
subdiffractional confinement of infrared light. Localized SPhP resonances in semiconductor …

Carrier dynamics in hydride vapor phase epitaxy grown bulk GaN with very low density of
dislocations, 5–8× 10 5 cm− 2, have been investigated by time-resolved photoluminescence …

Two trap-reduction processes, thermal oxidation and C+ implantation followed by Ar
annealing, have been discovered, being effective ways for reducing the Z 1/2 center (EC …

Applications of lead halide perovskites in solar cells and photo-and ionising radiation
detectors are based on effective charge carrier generation and transport. The perovskites …

Silicon carbide (SiC) is promising as a key material for power electronics devices owing to
its wide bandgap property. Meanwhile, by the convention wire-saw technique, it is difficult to …

Group-IV semiconductor compounds with intense optical nonlinearity have emerged as a
new branch of all-optical processing materials benefiting from the manufacturing …

We applied time-resolved pump-probe spectroscopy based on free carrier absorption and
light diffraction on a transient grating for direct measurements of the carrier lifetime and …

Materials with a negative dielectric permittivity (eg, metals) display high reflectance and can
be shaped into nanoscale optical resonators exhibiting extreme mode confinement, a …

All‐optical modulation based on silicon quantum dot doped SiOx: Si‐QD waveguide is
demonstrated. By shrinking the Si‐QD size from 4.3 nm to 1.7 nm in SiOx matrix (SiOx: Si …

In recent years, 4H-SiC power devices have been widely employed in power electronic
systems owing to their superior performance to Si power devices. However, stacking faults in …