Photovoltaic (PV) technology offers an economic and sustainable solution to the challenge
of increasing energy demand in times of global warming. The world PV market is currently …

To further increase the conversion efficiency of crystalline silicon (c-Si) solar cells, it is vital to
reduce the recombination losses associated with the contacts. Therefore, a contact structure …

Transition metal oxides (TMOs) have recently demonstrated to be a good alternative to
boron/phosphorous doped layers in crystalline silicon heterojunction solar cells. In this work …

Despite the existence of several highly effective and well-characterized passivating
materials for crystalline silicon surfaces, the topic of surface passivation and the …

This study focuses on boron‐doped p+ polysilicon (poly‐Si) passivating contacts using spin‐
on doping (SOD). Experimental conditions, including annealing conditions, SOD …

In this work, the ATOM (intrinsic a‐Si: H/TiOx/low work function metal) structure is
investigated to realize high‐performance passivating electron‐selective contacts for …

Excellent silicon surface passivation is achieved by atomic layer deposition (ALD) grown
hafnium oxide (HfO x) films on silicon surfaces (both n-type and p-type). It is inferred from the …

Synthesized pure and Ag-doped ZnO nanostructures through a simple co-precipitation
method, which was then applied onto silicon (Si) substrates using a spin-coating technique …

In this work, we develop SiOx/poly‐Si carrier‐selective contacts grown by low‐pressure
chemical vapor deposition and boron or phosphorus doped by ion implantation. We …

In this work, the application of carrier‐selective passivating contacts based on tunneling
silicon‐dioxide and ion‐implanted poly‐Si in front and rear contacted Si solar cells is …