Raman scattering in alloy semiconductors:" spatial correlation" model

P Parayanthal, FH Pollak - Physical review letters, 1984 - APS
Using a" spatial correlation" model with a Gaussian correlation function we have for the first
time quantitatively explained the broadening and asymmetry of the first-order longitudinal …

Structural origin of optical bowing in semiconductor alloys

A Zunger, JE Jaffe - Physical Review Letters, 1983 - APS
The principle of conservation and transferability of chemical bonds explains the recent
discovery by extended x-ray-absorption fine-structure measurements of two unequal anion …

Growth of highly tensile-strained Ge on relaxed InxGa1− xAs by metal-organic chemical vapor deposition

Y Bai, KE Lee, C Cheng, ML Lee… - Journal of Applied …, 2008 - pubs.aip.org
Highly tensile-strained Ge thin films and quantum dots have the potential to be implemented
for high mobility metal-oxide-semiconductor field-effect transistor channels and long …

Intraband relaxation time in quantum-well lasers

M Asada - IEEE journal of quantum electronics, 1989 - ieeexplore.ieee.org
Intraband relaxation time, which causes spectral broadening of optical gain and
spontaneous emission spectra, is estimated theoretically for quantum-well lasers. Carrier …

Optical-phonon behavior in The role of microscopic strains and ionic plasmon coupling

J Groenen, R Carles, G Landa, C Guerret-Piécourt… - Physical Review B, 1998 - APS
We present an experimental and theoretical investigation of long-wavelength optical-
phonon behavior in Ga 1− x In x As alloys. We propose a model which accounts …

Relative merits of phononics vs. plasmonics: the energy balance approach

JB Khurgin - Nanophotonics, 2018 - degruyter.com
The common feature of various plasmonic schemes is their ability to confine optical fields of
surface plasmon polaritons (SPPs) into subwavelength volumes and thus achieve a large …

[图书][B] The MOCVD Challenge: A survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications

M Razeghi - 2010 - taylorfrancis.com
Now in its second edition, this updated, combined volume provides a survey of GaInAsP-InP
and GaInAsP-GaAs related materials for electronic and photonic device applications. It …

Non-equilibrium longitudinal optical phonons and their lifetimes

DK Ferry - Applied Physics Reviews, 2021 - pubs.aip.org
Non-equilibrium phonons have been discussed for almost six decades. Here, the nature of
the longitudinal optical mode, particularly in polar materials, is discussed along with its …

Surface passivation and aging of InGaAs/InP heterojunction phototransistors

MS Park, M Razaei, K Barnhart, CL Tan… - Journal of Applied …, 2017 - pubs.aip.org
We report the effect of different surface treatment and passivation techniques on the stability
of InGaAs/InP heterojunction phototransistors (HPTs). An In 0.53 Ga 0.47 As surface …

Electron-phonon interactions in indium gallium arsenide

KJ Nash, MS Skolnick, SJ Bass - Semiconductor science and …, 1987 - iopscience.iop.org
The authors discuss the Frohlich electron-photon interaction and the Lyddane-Sachs-Teller
(LST) splittings of the optic phonon modes in mixed crystals with'two-mode'behaviour. The …