Doped and codoped silicon nanocrystals: The role of surfaces and interfaces
Si nanocrystals have been extensively studied because of their novel properties and their
potential applications in electronic, optoelectronic, photovoltaic, thermoelectric and …
potential applications in electronic, optoelectronic, photovoltaic, thermoelectric and …
Phosphorous-doped silicon carbide as front-side full-area passivating contact for double-side contacted c-Si solar cells
We present an electron selective passivating contact based on a tunneling SiO. capped with
a phosphorous doped silicon carbide and prepared with a high-temperature thermal anneal …
a phosphorous doped silicon carbide and prepared with a high-temperature thermal anneal …
Silicon-rich silicon carbide hole-selective rear contacts for crystalline-silicon-based solar cells
G Nogay, J Stuckelberger, P Wyss… - … applied materials & …, 2016 - ACS Publications
The use of passivating contacts compatible with typical homojunction thermal processes is
one of the most promising approaches to realizing high-efficiency silicon solar cells. In this …
one of the most promising approaches to realizing high-efficiency silicon solar cells. In this …
Self‐assembled silicon nanocrystal arrays for photovoltaics
M Schnabel, C Weiss, P Löper… - … status solidi (a), 2015 - Wiley Online Library
Silicon nanocrystals (Si NCs) are a promising candidate for the top cell of Si tandem solar
cells since their bandgap exceeds that of bulk silicon and can be tuned by adjusting …
cells since their bandgap exceeds that of bulk silicon and can be tuned by adjusting …
Ge quantum dot lattices in alumina prepared by nitrogen assisted deposition: Structure and photoelectric conversion efficiency
Thin films comprising three dimensional germanium (Ge) quantum dot lattices formed by
nitrogen (N) assisted magnetron sputtering deposition in alumina (Al 2 O 3) matrix have …
nitrogen (N) assisted magnetron sputtering deposition in alumina (Al 2 O 3) matrix have …
Ge quantum dots coated with metal shells (Al, Ta, and Ti) embedded in alumina thin films for solar energy conversion
A method to enhance the optoelectronic properties of thin films containing three-dimensional
ordered germanium quantum dots (QDs) coated with metal shell (Al, Ta, and Ti) in alumina …
ordered germanium quantum dots (QDs) coated with metal shell (Al, Ta, and Ti) in alumina …
Preparation of non-oxidized Ge quantum dot lattices in amorphous Al2O3, Si3N4 and SiC matrices
The preparation of non-oxidized Ge quantum dot (QD) lattices embedded in Al 2 O 3, Si 3 N
4, SiC matrices by self-assembled growth was studied. The materials were produced by …
4, SiC matrices by self-assembled growth was studied. The materials were produced by …
Graphene as transparent conducting layer for high temperature thin film device applications
GP Veronese, M Allegrezza, M Canino… - Solar Energy Materials …, 2015 - Elsevier
The use of graphene as transparent conducting layer in devices that require high
temperature processing is proposed. The material shows stability upon thermal treatments …
temperature processing is proposed. The material shows stability upon thermal treatments …
Retrieving the electronic properties of silicon nanocrystals embedded in a dielectric matrix by low-loss EELS
In this work we apply low-loss electron energy loss spectroscopy (EELS) to probe the
structural and electronic properties of single silicon nanocrystals (NCs) embedded in three …
structural and electronic properties of single silicon nanocrystals (NCs) embedded in three …
Full-area passivating contacts with high and low thermal budgets: Solutions for high efficiency c-Si solar cells
G Nogay - 2018 - infoscience.epfl.ch
Today more than 90% of the global PV market is covered by c-Si solar cells which are
limited by recombination losses at the metal-semiconductor interface. This recombination …
limited by recombination losses at the metal-semiconductor interface. This recombination …