Design and integration of vertical TFET and memristor for better realization of logical functions

J Singh, S Singh, N Paras - Silicon, 2023 - Springer
This paper deals the hybridization of tunnel FET with the memristor for better execution of
combinational and sequential circuits. Here, device structure of vertical tunnel FET and …

Insights into the design principles of JF-ED-VTFET for biosensing application

S Singh, SK Agnihotri, VK Tewari, KK Bharti… - Physica …, 2024 - iopscience.iop.org
In this research article, we have designed a junction-free electrostatically doped vertical
tunnel field-effect transistor (JF-ED-VTEFT) for label-free biosensing applications. We …

Assessment of Hetero-Structure Junction-Less Tunnel FET's Efficacy for Biosensing Applications

R Abdulnassir, A Singh, D Tekilu, G Subarao… - Sensing and …, 2023 - Springer
This work discusses a junction-less nanowire tunnel field effect transistor (JLN-TFET) that
combines the advantages of a junction-less field effect transistor (JLFET) and a tunnel field …

Evaluation of Design and Performance of Biosensor Utilizing Ferroelectric Vertical Tunnel Field-Effect Transistor (V-TFET)

R Gupta, S Beg, S Singh - Silicon, 2024 - Springer
In this work, a novel Ferroelectric gate oxide along with high-k dielectric HfO2 is introduced
in the Vertical TFET structure to incorporate the negative capacitance effect. The effects of …

Comparative investigation of low-power ferroelectric material embedded with different heterojunction vertical TFET structures

S Singh - Journal of Materials Science: Materials in Electronics, 2022 - Springer
This paper basically proposes and compares three different configurations of ferroelectric
oxide material on silicon body of vertical tunnel field-effect transistor. The charge plasma …

Comparative analysis of Change plasma and Junctionless Ferroelectric tunneling junction of VTFET for improved performance

S Singh - Silicon, 2023 - Springer
The effect of ferroelectric material at tunneling junction is compared for the two different
configuration of Charge plasma and Junctionless of Vertical TFET structure. Various …

Synergistic Effect of Ferroelectric and HfO2/SiO2 Hetero dielectrics in Junctionless FET for Analog and RF Applications

J Singh, RK Chauhan, N Yadava - Advanced Theory and Simulations - Wiley Online Library
The synergistic effect of ferroelectric and HfO2/SiO2 (Hafnium dioxide/Silicon dioxide) hetero
dielectrics in double gate Junctionless Field Effect Transistor is investigated using TCAD …

[引用][C] Design and Performance Analysis of Negative Capacitance Effect in the Charge Plasma-Based Junction-Less Vertical TFET Structure

S Singh, J Singh - Nano, 2023 - World Scientific
In this paper, a negative capacitance (NC) effect in series with normal oxide capacitance is
first time introduced to design negative capacitance charge plasma-based junction less …