We report an effective approach to reduce defects at a SiC/SiO 2 interface. Since oxidation
of SiC may inevitably lead to defect creation, the idea is to form the interface without …

Arguably, SiC technology is the most rapidly expanding IC manufacturing technology driven
mostly by the aggressive roadmap for battery electric vehicle penetration and also industrial …

Ultrasmall-scale semiconductor devices (≤ 5 nm) are advancing technologies, such as
artificial intelligence and the Internet of Things. However, the further scaling of these devices …

In this work, different annealing ambient (nitrogen‐oxygen‐nitrogen (N2‐O2‐N2), forming
gas‐oxygen‐forming gas (FG‐O2‐FG), and argon‐oxygen‐argon (Ar‐O2‐Ar)) were …

The electrical and physical properties of the SiC/SiO2 interfaces are critical for the reliability
and performance of SiC-based MOSFETs. Optimizing the oxidation and post-oxidation …

Digital electronics in SiC find use in high-temperature applications. The objective of this
study was to fabricate SiC CMOS without using ion implantation. In this letter, we present a …

State-of-the-art secondary ion mass spectrometry (SIMS), X-ray reflectivity (XRR) and atomic
force microscopy (AFM) have been used to determine the effect of oxidation temperature on …

In this work, different annealing ambient (nitrogen-oxygen-nitrogen (N< sub> 2-O< sub> 2-
N< sub> 2), forming gas-oxygen-forming gas (FG-O< sub> 2-FG), and argon-oxygen-argon …

Capacitance-voltage measurements performed at cryogenic temperatures (14–500 K) have
been used to determine the ultrashallow interface states in SiC MOS capacitors. These …

Repetitive avalanche stress results in the injection of hot holes into the gate oxide interface,
which leads to the degradations of electrical parameters, attracting wide attentions on …