High-resolution x-ray diffraction HRXRD and photoluminescence PL have been used to
study the diffusion of atoms in 8-nm Ga0. 628In0. 372N0. 015As0. 985/GaAs quantum well …

We have investigated the influence of the In 0.53 Ga 0.47 As cap layer and the stoichiometry
of the SiO x and SiN x cap layers on the band gap energy increase, ΔE g, induced by the …

We investigated the effects of InGaAs and dielectric (SiO2 and Si3N4) capping layers on the
intermixing behavior of InGaAs/InAlAs multiple quantum wells (MQWs) after rapid thermal …

We have oxidized AlAs layers laterally in a new type of oxidation system equipped with a
closed chamber, in which the vapour pressure of water can be varied over a wide range as a …

We have investigated the effects of the stoichiometry of SiOx and SiNx capping layers on the
band gap energy shift induced by impurity-free vacancy disordering of the In0. 2Ga0 …

We report the impurity-free vacancy diffusion (IFVD) behaviors of In 0.86 Ga 0.14 As 0.64 P
0.36/In 0.88 Ga 0.12 As 0.25 P 0.75 multiple quantum well (MQW) structures using dielectric …

Photonics IC is an attractive information processing means to fully utilize the enormous
bandwidth carried by the optical signals. The full integration of photonics devices, such as …

Using buried wet-oxidised AlxOy layers to enhance impurity free vacancy diffusion, the
intermixing of GaAs/AlGaAs quantum wells has been achieved. A 70 Å thick GaAs quantum …

We have investigated the effects of the stoichiometry of SiO x and SiN x capping layers on
the band gap energy shift induced by impurity-free vacancy disordering of the In 0.2 Ga 0.8 …

This thesis covers several aspects of impurity free vacancy enhanced quantum well (QW)
intermixing in GaAs/AlGaAs and InGaAs/GaAs quantum well structures. Spin-on silica film …