Monolithic bidirectional power transistors
Today's global megatrends—loosely defined as long-term trends that shape societies and
economies worldwide—include, eg, the transition to a fully renewable energy supply and the …
economies worldwide—include, eg, the transition to a fully renewable energy supply and the …
A Novel Three-Active-Switch Isolated Bridgeless Inverter for Renewable Energy Applications
B Kim, J Yea, B Han - IEEE Transactions on Industrial …, 2024 - ieeexplore.ieee.org
Module-integrated converters (MICs) have attracted attention as efficient distributed
renewable energy systems due to their high flexibility, reliability, and scalability. Given that …
renewable energy systems due to their high flexibility, reliability, and scalability. Given that …
Discrete-Time Model Based Dynamic Decoupling Active Damping Current Control for CSI-Fed High-Speed PMSM with Low Carrier Ratio
J Zhang, F Peng, Y Huang, Y Yao - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
This article proposes a dynamic decoupling active damping current control method for the
current-source inverter (CSI)-fed high-speed permanent magnet synchronous machine …
current-source inverter (CSI)-fed high-speed permanent magnet synchronous machine …
3 kV Monolithic Bidirectional GaN HEMT on Sapphire
MT Alam, S Mukhopadhyay, MM Haque… - arXiv preprint arXiv …, 2024 - arxiv.org
More than 3 kV breakdown voltage was demonstrated in monolithic bidirectional GaN
HEMTs for the first time having potential applications in 1200V or 1700V-class novel power …
HEMTs for the first time having potential applications in 1200V or 1700V-class novel power …
High-Voltage (1.2 kV) AlGaN/GaN Monolithic Bidirectional HEMTs With Low On-Resistance (2.54 m)
High-voltage (> 1.2 kV) bidirectional AlGaN/GaN HEMTs were fabricated with low ON-
resistance of or specific ON-resistance of 2.54. Two field plates with variable lengths were …
resistance of or specific ON-resistance of 2.54. Two field plates with variable lengths were …
GaN Active Rectifier Diode
Active or synchronous rectification is used today to further increase the efficiency of mass-
market power supplies by eliminating the turn-on voltage of rectifier diodes, thus reducing …
market power supplies by eliminating the turn-on voltage of rectifier diodes, thus reducing …
Unlocking the Opportunities of Bidirectional GaN Devices in Isolated DC/DC Converters and Multilevel Inverters
R Barzegarkhoo, T Pereira… - CIPS 2024; 13th …, 2024 - ieeexplore.ieee.org
Bi-directional power devices are based on four-quadrant operation to block a stress voltage
in both polarities and to conduct symmetric current. Typically, their major utilization is either …
in both polarities and to conduct symmetric current. Typically, their major utilization is either …
Reverse Blocking Enhancement‐Mode AlGaN/GaN HEMTs with Hybrid p‐GaN Ohmic Drain on the Si Substrates
Y Zhao, D Ren, P Luo, C Wang, L Yang… - … status solidi (a), 2024 - Wiley Online Library
Hybrid p‐GaN Ohmic drain reverse blocking high electron mobility transistors (RB‐HEMTs)
and conventional p‐GaN Enhancement‐mode (E‐mode) HEMTs are designed and …
and conventional p‐GaN Enhancement‐mode (E‐mode) HEMTs are designed and …
Challenges and Future Trends
P Le Fèvre, G Haynes, KK Leong… - … , Devices and Design for …, 2024 - Springer
In this chapter, industry experts Patrick Le Fèvre, Geoff Haynes, Kennith Kin Leong, Vlad
Odnoblyudov, Cem Basceri, and Han Wui Then examine the challenges and future trends of …
Odnoblyudov, Cem Basceri, and Han Wui Then examine the challenges and future trends of …
Comprehensive TCAD Simulation Study of High Voltage (> 650V) Common Drain Bidirectional AlGaN/GaN HEMTs
MT Alam, C Gupta - arXiv preprint arXiv:2304.04648, 2023 - arxiv.org
A broad TCAD simulation analysis of a monolithic common drain bidirectional GaN HEMT
was performed. We used gate-to-gate distances of 4 microns and 6 microns for the devices …
was performed. We used gate-to-gate distances of 4 microns and 6 microns for the devices …