Remote Epitaxy: Fundamentals, Challenges, and Opportunities
Advanced heterogeneous integration technologies are pivotal for next-generation
electronics. Single-crystalline materials are one of the key building blocks for heterogeneous …
electronics. Single-crystalline materials are one of the key building blocks for heterogeneous …
GaN remote epitaxy on a pristine graphene buffer layer via controlled graphitization of SiC
Freestanding semiconductor membranes hold significant potential for heterogeneous
integration technology and flexible electronics. Remote epitaxy, which leverages …
integration technology and flexible electronics. Remote epitaxy, which leverages …
Plasma enhanced chemical vapor deposition method prepared n-type GaN films for chips
Q Liang, H Xu, W Wu - Available at SSRN 4925408 - papers.ssrn.com
N-type GaN films for chip have been successfully prepared by simple, safe and low-cost
plasma enhanced chemical vapor deposition method at 925 C for different N2 flow rate. The …
plasma enhanced chemical vapor deposition method at 925 C for different N2 flow rate. The …