InAs/InGaP quantum dot solar cells with an AlGaAs interlayer
We studied the growth of InAs/InGaP quantum dot (QD) solar cells with near ideal bandgaps
for intermediate band solar cells. Using a solid-source molecular beam epitaxy system, the …
for intermediate band solar cells. Using a solid-source molecular beam epitaxy system, the …
Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots
N Fernandez-Delgado, M Herrera, MF Chisholm… - Applied Surface …, 2017 - Elsevier
In this work, the effect of the application of a thermal annealing on the structural properties of
GaSb/GaAs quantum dots (QDs) 1 is analyzed by aberration corrected high-angle annular …
GaSb/GaAs quantum dots (QDs) 1 is analyzed by aberration corrected high-angle annular …
Effect of thermal annealing on absorption and hole escape processes in type II GaSb/GaAs quantum dots: Implications for solar cell design
We present a theoretical study of the rapid thermal annealing process and strain on the
electronic, optical, and charge dynamical properties of type II GaSb/GaAs quantum dots …
electronic, optical, and charge dynamical properties of type II GaSb/GaAs quantum dots …
Effect of post-growth annealing treatment on interfacial misfit GaSb/GaAs heterostructures
Post-growth annealing treatments in the range 400–600° C are performed on GaSb/GaAs
Interfacial Misfit grown samples. Current density–voltage (J–V), Capacitance–voltage (C–V) …
Interfacial Misfit grown samples. Current density–voltage (J–V), Capacitance–voltage (C–V) …
Developing high-efficiency compound Semiconductor III-V Quantum-Dot Solar Cells
PM Lam - 2016 - discovery.ucl.ac.uk
A concept of utilising discrete energy levels to form an Intermediate Band (IB) within the
bandgap of a semiconductor solar cell has been studied. Such a feature can be achieved …
bandgap of a semiconductor solar cell has been studied. Such a feature can be achieved …