Design of a 5MHz half-bridge gate driver for GaN HEMTs with adaptive output current
L Li, D Zhou, W Huang, N He, Y Xu, R Ning… - IEICE Electronics …, 2023 - jstage.jst.go.jp
In this paper, a half-bridge gate driver with adaptive output current for GaN HEMTs is
introduced. The output drive current of the driver is adapted to the load of GaN HEMTs, by …
introduced. The output drive current of the driver is adapted to the load of GaN HEMTs, by …
A 20MHz 4A gate driver with 5.5 to 24V output drive voltage for wide bandgap FETs
D Zhou, H Lu, S Yuan, N He, Y Xu, R Ning… - IEICE Electronics …, 2022 - jstage.jst.go.jp
A high-speed gate driver circuit which can meet both GaN FET and SiC MOSFET is
presented. High-speed output drive circuit with wide output drive voltage is introduced in the …
presented. High-speed output drive circuit with wide output drive voltage is introduced in the …
[PDF][PDF] RELIABILITY AND INTEGRATION OF GAN POWER DEVICES AND CIRCUITS ON GAN-ON-SOI
LI Xiangdong - 2020 - lirias.kuleuven.be
My deepest gratitude goes foremost to Prof. Guido Groeseneken, my supervisor, for his
encouragement and guidance. He has walked me through the past 4.5-years Ph. D period …
encouragement and guidance. He has walked me through the past 4.5-years Ph. D period …