Polarity-Tunable Photocurrent through Band Alignment Engineering in a High-Speed WSe2/SnSe2 Diode with Large Negative Responsivity
Excellent light–matter interaction and a wide range of thickness-tunable bandgaps in
layered vdW materials coupled by the facile fabrication of heterostructures have enabled …
layered vdW materials coupled by the facile fabrication of heterostructures have enabled …
A novel broken-gap chemical-bonded SiC/Ti 2 CO 2 heterojunction with band to band tunneling: first-principles investigation
ZN Dai, W Sheng, XY Zhou, J Zhan, Y Xu - Physical Chemistry …, 2023 - pubs.rsc.org
A broken-gap heterojunction is a bright approach for designing tunneling field-effect
transistors (TFETs) due to its distinct quantum tunneling mechanisms. In this study, we …
transistors (TFETs) due to its distinct quantum tunneling mechanisms. In this study, we …
Tunnel field effect transistor (TFET): A review
FA Omar, TM Abdolkader - International Journal of Materials …, 2024 - ijmti.journals.ekb.eg
Tunnel field effect transistors (TFETs) offer a solution to the concerns that accompanied
conventional Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) as a result of …
conventional Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) as a result of …
Analysis of the Dual Gate Vertical TFET Performance with a Dual Gate Oxide Material Stacking
PK Kumawat, S Birla, N Singh - 2023 IEEE 3rd International …, 2023 - ieeexplore.ieee.org
In terms of electrical output parameters, TFET surpasses traditional MOSFET. The device
name for TFET is also dependent on their structure. This work designs a dual gate vertical …
name for TFET is also dependent on their structure. This work designs a dual gate vertical …
Overcoming sub-threshold swing degradation in sub 10 nm technologies
C Zou - Asia Conference on Electronic Technology (ACET …, 2024 - spiedigitallibrary.org
Scaling of the transistor dimensions has led to a higher transistor density that requires high
power dissipation. Due to the physical limit, the traditional metal-oxide-semiconductor field …
power dissipation. Due to the physical limit, the traditional metal-oxide-semiconductor field …
Performance Analysis of an Inner Gate Vertical TFET
KK Selvi, KS Dhanalakshmi, G Sathashivam… - Circuit Design for … - taylorfrancis.com
In the realm of semiconductor technology, the search for transistors that can operate
efficiently at lower voltages while maintaining high performance continues to drive …
efficiently at lower voltages while maintaining high performance continues to drive …
[引用][C] Optimizing ON-State Current and RF Figures of Merit in hetero gate through Advanced Source Design
D Jessintha, PB Muthiah, A Kavitha… - Surface Review and …, 2025 - World Scientific
Using a device simulator developed by Technology Computer Aided Design, this study
examines how changing the dielectric material close to the source area affects the linearity …
examines how changing the dielectric material close to the source area affects the linearity …