During the last few years the interest in the indium nitride (InN) semiconductor has been
remarkable. There have been significant improvements in the growth of InN films. High …

Single crystalline InN films with an absorption edge between 0.7 and 2 eV have been grown
using a variety of different techniques, including conventional metal-organic vapor-phase …

GaSb quantum rings in GaAs were studied by cross-sectional scanning tunneling
microscopy. The quantum rings have an outer shape of a truncated pyramid with typical …

Spectroscopic observations of high-quality wurtzite InN have shown that oxygen is easily
incorporated in the crystal by thermal treatments in the air. Incorporation of oxygen may play …

Abstract We examine the Moss–Burstein effect for InN and demonstrate an independent
method for determing its magnitude for high carrier concentration material. Consequently it …

Indium nitride (InN) thin films were deposited onto Si (110) by reactive sputtering and pure In
target at ambient temperature. The effects of the Ar–N2 sputtering gas mixture on the …

It is shown that the wide variation of apparent band‐gap observed for thin films nominally
referred to as InN is strongly influenced by variations in the nitrogen: indium stoichiometry …

We fabricated indium nitride (InN) on porous silicon (PSi) on crystalline silicon [Si (100)]
heterostructure photodetector via radio frequency sputtering. PSi layer was synthesised on n …

This study involves the synthesis of indium nitride (InN) nanoparticles at low temperature
using a chemical method. The synthesized InN nanoparticle exhibited high quality …

Nitrogen rich indium nitride (InN) thin films were deposited on anisotropic silicon [Si (110)]
and 6H-silicon carbide (6H-SiC) substrates by reactive radio frequency sputtering technique …