Stability, reliability, and robustness of GaN power devices: A review
Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and
form factor of power electronics. However, the material composition, architecture, and …
form factor of power electronics. However, the material composition, architecture, and …
Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review
This article critically reviews the architectural novelties, emerging materials (substrate,
buffer, barrier & contact materials), technological advancements, processing techniques …
buffer, barrier & contact materials), technological advancements, processing techniques …
GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices
N Wu, Z Xing, S Li, L Luo, F Zeng… - … Science and Technology, 2023 - iopscience.iop.org
Conventional silicon (Si)-based power devices face physical limitations—such as switching
speed and energy efficiency—which can make it difficult to meet the increasing demand for …
speed and energy efficiency—which can make it difficult to meet the increasing demand for …
Trap-state mapping to model GaN transistors dynamic performance
Trapping phenomena degrade the dynamic performance of wide-bandgap transistors.
However, the identification of the related traps is challenging, especially in presence of non …
However, the identification of the related traps is challenging, especially in presence of non …
A comprehensive review of AlGaN/GaN High electron mobility transistors: Architectures and field plate techniques for high power/high frequency applications
Abstract AlGaN/GaN High Electron Mobility Transistor (HEMT) frequently employs field plate
techniques to improve the device's reliability and optimum performance. This literature …
techniques to improve the device's reliability and optimum performance. This literature …
Compact modeling of nonideal trapping/detrapping processes in GaN power devices
N Modolo, C De Santi, G Baratella… - … on Electron Devices, 2022 - ieeexplore.ieee.org
Compact modeling of charge trapping processes in GaN transistors is of fundamental
importance for advanced circuit design. The goal of this article is to propose a methodology …
importance for advanced circuit design. The goal of this article is to propose a methodology …
Investigations on Wide-Gap Al0.21Ga0.79N Channel MOS-HFETs With In0.12Al0.76Ga0.12N Barrier/Buffer and Drain Field-Plate
CS Lee, CT Cheng, JH Ke… - IEEE Journal of the …, 2023 - ieeexplore.ieee.org
This work investigates, for the first time, wide-gap Al0. 21Ga0. 79N channel metal-oxide-
semiconductor heterostructure field-effect transistors (MOS-HFETs) with In0. 12Al0. 76Ga0 …
semiconductor heterostructure field-effect transistors (MOS-HFETs) with In0. 12Al0. 76Ga0 …
Positive VTH shift in Schottky p-GaN Gate power HEMTs: Dependence on Temperature, Bias and Gate leakage
In this article, we present an extensive analysis of the positive threshold voltage instability in
Schottky p-GaN gate enhancement-mode devices, investigated by a custom setup allowing …
Schottky p-GaN gate enhancement-mode devices, investigated by a custom setup allowing …
660-V/1.99-m.cm Low-Current-Collapse p-GaN/AlGaN/GaN HEMTs With Selective Regrowth AlN/AlGaN Strain Layers
J Shen, C Yang, L Jing, J Guo, P Li… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
In this article, an enhancement mode (E-mode) p-GaN gate AlGaN/GaN high electron
mobility transistor (HEMT) with the selective regrowth (SR) AlN/AlGaN strain enhancement …
mobility transistor (HEMT) with the selective regrowth (SR) AlN/AlGaN strain enhancement …
Study of the effect of circular p-GaN gate on the DC characteristics of AlGaN/GaN HEMTs
Y Zhu, Y Wang, D Luo, X Yang, Q Li… - Semiconductor …, 2025 - iopscience.iop.org
In this paper, we use Silvaco-ATLAS two-dimensional numerical simulation to calculate the
performance of two different circular-gate AlGaN/GaN HEMT device models. The influence …
performance of two different circular-gate AlGaN/GaN HEMT device models. The influence …