Research of p‐i‐n Junctions Based on 4H‐SiC Fabricated by Low‐Temperature Diffusion of Boron
IG Atabaev, KN Juraev - Advances in Materials Science and …, 2018 - Wiley Online Library
Novel method of boron diffusion at low temperatures between 1150 and 1300° C is used for
the formation of both p‐i SiC junction and i‐region in one technological process. As the …
the formation of both p‐i SiC junction and i‐region in one technological process. As the …
Reaction–diffusion bonding of CVD SiC using CrAl thin coating layer
HG Lee, D Kim, WJ Kim, JY Park - Journal of the Korean Ceramic Society, 2022 - Springer
A new reaction–diffusion bonding method using a CrAl thin coating interlayer was proposed
for joining chemical vapor deposition (CVD) SiC. The 180 nm CrAl-coated CVD SiC plates …
for joining chemical vapor deposition (CVD) SiC. The 180 nm CrAl-coated CVD SiC plates …
[PDF][PDF] Charakterisierung und Modellierung von Ti/Al-basierten ohmschen Kontaktgebieten auf p-dotiertem 4H-Siliciumcarbid
M Kocher - 2021 - opus4.kobv.de
Für die Herstellung von Leistungshalbleiterbauelementen sind reproduzierbare,
niederohmige Kontakte elementar. Hierzu ist es notwendig, dass die zugrundeliegenden …
niederohmige Kontakte elementar. Hierzu ist es notwendig, dass die zugrundeliegenden …
Spectral Dependence of Optical Absorption of 4H‐SiC Doped with Boron and Aluminum
Optical absorption of pn-4H‐SiC structures doped with boron and aluminum by low‐
temperature diffusion was studied for the first time. Diffusion of impurities was performed …
temperature diffusion was studied for the first time. Diffusion of impurities was performed …
ACTIVATION ENERGY OF THE CONDUCTANCE OF pw-4H-SiC (Al) STRUCTURES DOPED WITH ALUMINUM BY THE METHOD OF LOW-TEMPERATURE …
KN Zhuraev, A Yusupov, AG Gulyamov… - Journal of Engineering …, 2020 - go.gale.com
A study has been made of the activation energy of the conductance of a pn-4H-SiC< Al>
structure created through the doping of silicon carbide with aluminum. The doping was …
structure created through the doping of silicon carbide with aluminum. The doping was …
[PDF][PDF] IMPROVING THE EFFICIENCY OF MICRO-HYDROELECTRIC PLANTS OPERATING IN SMALL WATER STREAMS
O O'ktamov - PhD Байменов АЖ және Кантарбаева ДО жалпы …, 2024 - sci.kz
1Физико-технический институт АН РУз, г. Ташкент, Узбекистан 2НИУ «Ташкентский
институт инженеров ирригации и механизации сельского хозяйства» г. Ташкент …
институт инженеров ирригации и механизации сельского хозяйства» г. Ташкент …
Dose dependent profile deviation of implanted aluminum in 4H-SiC during high temperature annealing
M Kocher, M Rommel, T Sledziewski… - … Conference on Ion …, 2018 - ieeexplore.ieee.org
The influence of the high temperature annealing on differently implanted Al profiles was
investigated by SIMS measurements. Depending on the implanted dose and also …
investigated by SIMS measurements. Depending on the implanted dose and also …
Current Transport Mechanisms and Electrophysical Characteristics of the 4H-SiC pn Junctions Formed by Aluminum Diffusion
K JURAEV, M KHAJIEV, A KUTLIMRATOV… - Materials …, 2021 - matsc.ktu.lt
In this paper, the electrophysical characteristics of the 4H-SiC pn junction created by low-
temperature diffusion of aluminum were studied. Current-voltage (IV) characteristics are …
temperature diffusion of aluminum were studied. Current-voltage (IV) characteristics are …