Improved yolov8-gd deep learning model for defect detection in electroluminescence images of solar photovoltaic modules

Y Cao, D Pang, Q Zhao, Y Yan, Y Jiang, C Tian… - … Applications of Artificial …, 2024 - Elsevier
Photovoltaic defect detection is an essential aspect of research on building-distributed
photovoltaic systems. Existing photovoltaic defect detection models based on deep learning …

Modeling of polarization charge in N-face InGaN/GaN MQW solar cells

R Belghouthi, S Taamalli, F Echouchene… - Materials Science in …, 2015 - Elsevier
The present work reports on a theoretical study of spontaneous and piezoelectric
polarization effects on the photovoltaic characteristics of InGaN/GaN multiple quantum well …

Design and optimization of a high efficiency CdTe–FeSi2 based double-junction two-terminal tandem solar cell

MH Tonmoy, SN Shiddique, AT Abir, J Hossain - Heliyon, 2024 - cell.com
This article theoretically demonstrates an enormously efficient CdTe–FeSi 2 based dual-
junction tandem solar cell accompanied by slender semiconductor layers. The peak …

Leakage current reduction in n-GaN/p-Si (100) heterojunction solar cells

KMA Saron, M Ibrahim, MR Hashim, TA Taha… - Applied Physics …, 2021 - pubs.aip.org
We report on the growth of n-GaN/p-Si heterojunction solar cells via thermal chemical vapor
deposition on Si (100) substrates at different growth temperatures (900, 950, and 1000 C) …

Design and analysis of inorganic tandem architecture with synergistically optimized BaSnS3 top and AgTaS3 bottom perovskite Sub-Cells

T Ahmed, SN Shiddique, A Kuddus, M Hossain… - Solar Energy, 2024 - Elsevier
Perovskite materials are revolutionizing the solar cell (SC) industry, continually enhancing
their properties and establishing a prominent photovoltaic technology. Among these, BaSnS …

Analytical modeling of polarization effects in InGaN double hetero-junction pin solar cells

R Belghouthi, JP Salvestrini, MH Gazzeh… - Superlattices and …, 2016 - Elsevier
We propose a new and simple analytical model taking into account of the polarization
charge effects in order to assess the performance of InGaN-based PIN solar cells. The main …

Improving InGaN heterojunction solar cells efficiency using a semibulk absorber

M Arif, W Elhuni, J Streque, S Sundaram… - Solar Energy Materials …, 2017 - Elsevier
We demonstrate enhanced short circuit current density and power conversion efficiency in
InGaN heterojunction solar cells using a semibulk absorber (multi-layered InGaN/GaN …

Performance evaluation of lead free CH3NH3SnI3/GeTe Tandem solar cell with HTL layer by SCAPS 1D

T Ahmed, SUD Shamim, SK Maity, A Basak - Optik, 2023 - Elsevier
In this article, with the help of a one dimensional solar cell simulator, we have assessed
different performance parameters of a lead free CH 3 NH 3 SnI 3/GeTe Tandem solar cell …

Modeling the effects of defect parameters on the performance of a p-BaSi2/n-Si heterojunction solar cell

T Deng, Z Xu, Y Yamashita, T Sato, K Toko… - Solar energy materials …, 2020 - Elsevier
Barium disilicide (BaSi 2) in thin-film solar cell applications has drawn considerable interest
owing to its promising optical and electrical properties. We have achieved an efficiency of …

Temperature dependence of InGaN/GaN Multiple quantum well solar cells

R Belghouthi, M Aillerie - Energy Procedia, 2019 - Elsevier
Elements based on nitride family and more specifically, those of the GaN/InGaN family,
present a great interest for renewable energy conversion systems as they offer huge …