The present work reports on a theoretical study of spontaneous and piezoelectric polarization effects on the photovoltaic characteristics of InGaN/GaN multiple quantum well …
MH Tonmoy, SN Shiddique, AT Abir, J Hossain - Heliyon, 2024 - cell.com
This article theoretically demonstrates an enormously efficient CdTe–FeSi 2 based dual- junction tandem solar cell accompanied by slender semiconductor layers. The peak …
We report on the growth of n-GaN/p-Si heterojunction solar cells via thermal chemical vapor deposition on Si (100) substrates at different growth temperatures (900, 950, and 1000 C) …
Perovskite materials are revolutionizing the solar cell (SC) industry, continually enhancing their properties and establishing a prominent photovoltaic technology. Among these, BaSnS …
We propose a new and simple analytical model taking into account of the polarization charge effects in order to assess the performance of InGaN-based PIN solar cells. The main …
We demonstrate enhanced short circuit current density and power conversion efficiency in InGaN heterojunction solar cells using a semibulk absorber (multi-layered InGaN/GaN …
In this article, with the help of a one dimensional solar cell simulator, we have assessed different performance parameters of a lead free CH 3 NH 3 SnI 3/GeTe Tandem solar cell …
T Deng, Z Xu, Y Yamashita, T Sato, K Toko… - Solar energy materials …, 2020 - Elsevier
Barium disilicide (BaSi 2) in thin-film solar cell applications has drawn considerable interest owing to its promising optical and electrical properties. We have achieved an efficiency of …
Elements based on nitride family and more specifically, those of the GaN/InGaN family, present a great interest for renewable energy conversion systems as they offer huge …