Strained vertical field-effect transistor (FET) and method of forming the same
A method for manufacturing a semiconductor device includes forming a first semiconductor
layer on a substrate, forming a bottom source/drain region on the first semiconductor layer …
layer on a substrate, forming a bottom source/drain region on the first semiconductor layer …
Scaling the MOSFET: detrimental short channel effects and mitigation techniques
MS Equbal, S Sahay - Nanoelectronics: Physics, Materials and Devices, 2023 - Elsevier
This chapter discusses the need to scale down the transistors incessantly to sustain the
smart revolution in this era of Internet-of-Things and its implication on the behavior of …
smart revolution in this era of Internet-of-Things and its implication on the behavior of …
Effects of S/D doping concentrations on strained SiGe vertical I-MOS characteristics
D Pogaku, I Saad - 2011 3rd International Conference on …, 2011 - ieeexplore.ieee.org
This paper reports the effects of source and drain doping concentration on the device
characteristics of strained SiGe vertical Impact Ionization MOSFET (I-MOS). Silvaco 2-D …
characteristics of strained SiGe vertical Impact Ionization MOSFET (I-MOS). Silvaco 2-D …
Enhanced performance analysis of vertical strained-sigeimpact Ionization MOSFET (VESIMOS)
The Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET (VESIMOS) has
been successfully developed and analyzed in this paper. VESIMOS device integrates …
been successfully developed and analyzed in this paper. VESIMOS device integrates …
Single and dual strained channel analysis of vertical strained—SiGe impact ionization MOSFET (VESIMOS)
Single Channel (SC) and Dual Channel (DC) Vertical Strained-SiGe Impact Ionization
MOSFET (VESIMOS) has been successfully simulated and analyzed in this paper. Found …
MOSFET (VESIMOS) has been successfully simulated and analyzed in this paper. Found …
Investigation of incorporating dielectric pocket (DP) on vertical strained-SiGe impact ionization MOSFET (VESIMOS-DP)
The Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET with Dielectric
Pocket (VESIMOS-DP) has been successfully developed and analyzed in this paper. Due to …
Pocket (VESIMOS-DP) has been successfully developed and analyzed in this paper. Due to …
Quasi-analytical model-based performance analysis of dual material gate stack strained GAA FinFET
AT Shora, FA Khanday - International Journal of Electronics Letters, 2020 - Taylor & Francis
The evolution of traditional field effect transistor from planar to three-dimensional (3-D)
device structure has led to higher package density and high current drive. However, due to …
device structure has led to higher package density and high current drive. However, due to …
Breakdown Voltage Reduction Analysis with Adopting Dual Channel Vertical Strained SiGe Impact Ionization MOSFET (VESIMOS).
I Saad, C Bun Seng, H Mohd Zuhir… - … Systems, Science & …, 2014 - search.ebscohost.com
Abstract The Single and Dual Strained SiGe layer for Vertical Strained Silicon Germanium
(SiGe) Impact Ionization MOSFET (VESIMOS) have been successfully analyzed in this …
(SiGe) Impact Ionization MOSFET (VESIMOS) have been successfully analyzed in this …
Impact of strain and DP position on the performance of Vertical Strained-SiGe Impact Ionization MOSFET incorporating dielectric pocket (VESIMOS-DP)
The Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET with Dielectric
Pocket (VESIMOS-DP) has been successfully developed and analyzed in this paper. The …
Pocket (VESIMOS-DP) has been successfully developed and analyzed in this paper. The …
[PDF][PDF] Full-Band Monte Carlo Simulations for Vertical Impact Ionization MOSFETs
TV Dinh - 2010 - athene-forschung.unibw.de
Since the declaration of CMOS nano-technology era in 1999, according to the International
Technology Roadmap for Semiconductors (ITRS), CMOS transistors will be continuously …
Technology Roadmap for Semiconductors (ITRS), CMOS transistors will be continuously …