[HTML][HTML] Self-trapped holes in β-Ga2O3 crystals
BE Kananen, NC Giles, LE Halliburton… - Journal of Applied …, 2017 - pubs.aip.org
We have experimentally observed self-trapped holes (STHs) in a β-Ga 2 O 3 crystal using
electron paramagnetic resonance (EPR). These STHs are an intrinsic defect in this wide …
electron paramagnetic resonance (EPR). These STHs are an intrinsic defect in this wide …
Large-bandwidth transduction between an optical single quantum dot molecule and a superconducting resonator
Quantum transduction between the microwave and optical domains is an outstanding
challenge for long-distance quantum networks based on superconducting qubits. For all …
challenge for long-distance quantum networks based on superconducting qubits. For all …
Near-infrared lateral photoresponse in InGaAs/GaAs quantum dots
Abstract Infrared photodetectors with In (Ga) As quantum dot (QD) active element functioning
on interband and intersubband transitions are currently actively investigated, however, the …
on interband and intersubband transitions are currently actively investigated, however, the …
Comparative study of photoelectric properties of metamorphic InAs/InGaAs and InAs/GaAs quantum dot structures
Optical and photoelectric properties of metamorphic InAs/InGaAs and conventional
pseudomorphic InAs/GaAs quantum dot (QD) structures were studied. We used two different …
pseudomorphic InAs/GaAs quantum dot (QD) structures were studied. We used two different …
Interband photoconductivity of metamorphic InAs/InGaAs quantum dots in the 1.3–1.55-μm window
Photoelectric properties of the metamorphic InAs/In x Ga 1− x As quantum dot (QD)
nanostructures were studied at room temperature, employing photoconductivity (PC) and …
nanostructures were studied at room temperature, employing photoconductivity (PC) and …
Effects of strain and composition distribution on the optical characteristics of GaAs/InGaAlAs/GaAs double asymmetric tunnel-coupled quantum wells
A Bobrov, A Nezhdanov, K Sidorenko, N Baidus… - Optical Materials, 2024 - Elsevier
Using a comprehensive approach that includes structural, optical, and theoretical studies,
this work offers research demonstrating the capability to evaluate the individual and total …
this work offers research demonstrating the capability to evaluate the individual and total …
Photoelectric properties of the metamorphic InAs/InGaAs quantum dot structure at room temperature
We present the study of optical and photoelectric properties of InAs quantum dots (QDs)
grown on a metamorphic In 0.15 Ga 0.85 As buffer layer: such nanostructures show efficient …
grown on a metamorphic In 0.15 Ga 0.85 As buffer layer: such nanostructures show efficient …
Defect influence on in-plane photocurrent of InAs/InGaAs quantum dot array: long-term electron trapping and Coulomb screening
Abstract Metamorphic InAs/In 0.15 Ga 0.85 As and InAs/In 0.31 Ga 0.69 As quantum dot
(QD) arrays are known to be photosensitive in the telecommunication ranges at 1.3 and 1.55 …
(QD) arrays are known to be photosensitive in the telecommunication ranges at 1.3 and 1.55 …
Intensity-dependent nonlinearity of the lateral photoconductivity in InGaAs/GaAs dot-chain structures
SL Golovynskyi, OI Dacenko, SV Kondratenko… - Journal of Applied …, 2016 - pubs.aip.org
Photoelectric properties of laterally correlated multilayer InGaAs/GaAs quantum dots (QDs)
heterostructures are studied. The response of the photocurrent to increasing excitation …
heterostructures are studied. The response of the photocurrent to increasing excitation …
Photoconductivity of GeSn thin films with up to 15% Sn content
We have used temperature-dependent photoconductivity (PC) with different excitation
wavelengths and intensities to study the photoexcited charge-carrier transport within …
wavelengths and intensities to study the photoexcited charge-carrier transport within …