Carbon Nitride Thin Film‐Sensitized Graphene Field‐Effect Transistor: A Visible‐Blind Ultraviolet Photodetector

T Palanisamy, S Mitra, N Batra, J Smajic… - Advanced Materials …, 2022 - Wiley Online Library
Ultraviolet (UV) photodetectors often suffer from the lack of spectral selectivity due to strong
interference from visible light. In this study, the exceptional electrical properties of graphene …

Large area ultraviolet photodetector on surface modified Si: GaN layers

R Anitha, R Ramesh, R Loganathan… - Applied Surface …, 2018 - Elsevier
Unique features of semiconductor based heterostructured photoelectric devices have drawn
considerable attention in the recent past. In the present work, large area UV photodetector …

Hybrid functional calculations of optoelectronic properties of ultra-wide bandgap LiSmO2: A first-principle study

SSA Shah, N Muhammad, G Murtaza, A Khan… - Solid State …, 2022 - Elsevier
Due to their numerous superior properties, the advent of ultra-wide bandgap (UWBG)
semiconductors with bandgaps noticeably greater than 3.4 eV ushers in a new era of …

Optoelectronic properties of ultra-wide-bandgap semiconductor NaYO2: A first-principles study

N Muhammad, MU Muzaffar, H Li, Z Ding - 2023 - pubs.aip.org
Ultra-wide-bandgap semiconductors have tremendous potential to advance electronic
devices, as device performance improves nonlinearly with increasing gap. In this work we …

Analysis of Data on the Resource of Solar Energy for a Set Geographic Point

YV Daus, IV Yudaev, SA Tarasov, VV Kharchenko - Applied Solar Energy, 2021 - Springer
The information on the various parameters of solar radiation should be sufficient, relevant,
accessible from the point of view of design, optimization, and justification of the parameters …

[PDF][PDF] Физико-технологические основы создания светоизлучающих и фотоприемных твердотельных приборов с заданными спектрально-энергетическими …

СА Тарасов - дис.… докт. техн. наук/СА Тарасов, 2016 - etu.ru
Актуальность темы исследования. Одной из важнейших задач современной науки и
техники является разработка твердотельных светоизлучающих приборов и …

Comparative evaluation of the photosynthetic photonic efficiency of white LEDs

AA Smirnov, YA Proshkin, DA Burynin… - … Series: Earth and …, 2023 - iopscience.iop.org
White LEDs are an effective solution for light culture due to the presence of the green
emission spectrum, which has a positive effect on growing plants in the artificial …

Temperature characteristics of the photosensitive structures metal-AlGaN developed by vacuum thermal deposition

AA Anikina, SA Tarasov, IA Lamkin… - IOP Conference Series …, 2018 - iopscience.iop.org
Broadband ultraviolet photodiodes are developed on the basis of Au-AlGaN Schottky barrier
and also the ultraselection ultraviolet photodiodes with a photosensitivity range width on a …

AlGaN photodiodes for UVC, UVB and UVA spectral ranges

IA Lamkin, MY Andreev, SA Tarasov… - 2015 IEEE NW …, 2015 - ieeexplore.ieee.org
A technology of ultraviolet photodiodes based on Me-AlGaN Schottky barrier separating in
UVA, UVB and UVC spectral ranges was proposed. The effect of altering the AlGaN soild …

Exploration of trap levels in GaN and Al0. 2Ga0. 8N layers by temperature-dependent photoconductivity measurement

N Prakash, G Kumar, A Barvat, K Anand… - Materials Today …, 2018 - Elsevier
The optoelectronics properties of Gallium Nitride and its alloys are attracting increasing
interest due to the potential application of these materials for UV photodetectors and high …