Nonlinear Microwave and RF circuits
SA Maas - Artech House, 2003 - books.google.com
This newly and thoroughly revised edition of the 1988 Artech House classic offers you a
comprehensive, up-to-date treatment of nonlinear microwave and RF circuits. It gives you a …
comprehensive, up-to-date treatment of nonlinear microwave and RF circuits. It gives you a …
[图书][B] The RF and microwave handbook
M Golio - 2000 - taylorfrancis.com
The recent shift in focus from defense and government work to commercial wireless efforts
has caused the job of the typical microwave engineer to change dramatically. The modern …
has caused the job of the typical microwave engineer to change dramatically. The modern …
A van der Waals interfacial junction transistor for reconfigurable fuzzy logic hardware
Edge devices face challenges when implementing deep neural networks due to constraints
on their computational resources and power consumption. Fuzzy logic systems can …
on their computational resources and power consumption. Fuzzy logic systems can …
[图书][B] RF and microwave circuits, measurements, and modeling
Highlighting the challenges RF and microwave circuit designers face in their day-to-day
tasks, RF and Microwave Circuits, Measurements, and Modeling explores RF and …
tasks, RF and Microwave Circuits, Measurements, and Modeling explores RF and …
[图书][B] Circuit simulation with SPICE OPUS: theory and practice
This book is the first complete guide to analog circuit design using the circuit simulator
software package SPICE OPUS. Developed by the authors and used by academics and …
software package SPICE OPUS. Developed by the authors and used by academics and …
Electrothermal large-signal model of III–V FETs including frequency dispersion and charge conservation
LS Liu, JG Ma, GI Ng - IEEE transactions on microwave theory …, 2009 - ieeexplore.ieee.org
An empirical large-signal III–V field-effect transistor (FET) model has been developed. Three
improved drain-source current (I–V) modeling equations capable of representing arbitrarily …
improved drain-source current (I–V) modeling equations capable of representing arbitrarily …
Resistive FET mixer conversion loss and IMD optimization by selective drain bias
This paper describes a dedicated nonlinear MESFET model, which was used to accurately
represent the device's drain-source current nonlinearity. An analytical expression is …
represent the device's drain-source current nonlinearity. An analytical expression is …
Low-distortion MMIC power amplifier using a new form of derivative superposition
DR Webster, DG Haigh - IEEE Transactions on Microwave …, 2001 - ieeexplore.ieee.org
Reduction of interchannel interference produced by a power amplifier near 1-dB
compression is a key concern for the wireless communications industry. In this paper, we …
compression is a key concern for the wireless communications industry. In this paper, we …
An extended-temperature IV model for GaN HEMTs
J Yang, J Zhu - Solid-State Electronics, 2022 - Elsevier
In this paper, a novel extended-temperature current–voltage (IV) model for Gallium Nitride
(GaN) high electron mobility transistors (HEMT) devices is proposed. Revised from the …
(GaN) high electron mobility transistors (HEMT) devices is proposed. Revised from the …
Measurement and characterization of HEMT dynamics
AE Parker, JG Rathmell - IEEE Transactions on Microwave …, 2001 - ieeexplore.ieee.org
The variation of high electron-mobility transistor (HEMT) large-signal behavior with a change
in operating condition is examined with a view to understanding the dynamics involved and …
in operating condition is examined with a view to understanding the dynamics involved and …