Two-dimensional materials prospects for non-volatile spintronic memories

H Yang, SO Valenzuela, M Chshiev, S Couet, B Dieny… - Nature, 2022 - nature.com
Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque
MRAM and next-generation spin–orbit torque MRAM, are emerging as key to enabling low …

Physics for neuromorphic computing

D Marković, A Mizrahi, D Querlioz, J Grollier - Nature Reviews Physics, 2020 - nature.com
Neuromorphic computing takes inspiration from the brain to create energy-efficient hardware
for information processing, capable of highly sophisticated tasks. Systems built with standard …

Resistive switching materials for information processing

Z Wang, H Wu, GW Burr, CS Hwang, KL Wang… - Nature Reviews …, 2020 - nature.com
The rapid increase in information in the big-data era calls for changes to information-
processing paradigms, which, in turn, demand new circuit-building blocks to overcome the …

Opportunities and challenges for spintronics in the microelectronics industry

B Dieny, IL Prejbeanu, K Garello, P Gambardella… - Nature …, 2020 - nature.com
Spintronic devices exploit the spin, as well as the charge, of electrons and could bring new
capabilities to the microelectronics industry. However, in order for spintronic devices to meet …

[图书][B] Efficient processing of deep neural networks

V Sze, YH Chen, TJ Yang, JS Emer - 2020 - Springer
This book provides a structured treatment of the key principles and techniques for enabling
efficient processing of deep neural networks (DNNs). DNNs are currently widely used for …

Adaptive extreme edge computing for wearable devices

E Covi, E Donati, X Liang, D Kappel… - Frontiers in …, 2021 - frontiersin.org
Wearable devices are a fast-growing technology with impact on personal healthcare for both
society and economy. Due to the widespread of sensors in pervasive and distributed …

Magnetoresistive random access memory: Present and future

S Ikegawa, FB Mancoff, J Janesky… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
Magnetoresistive random access memory (MRAM) is regarded as a reliable persistent
memory technology because of its long data retention and robust endurance. Initial MRAM …

Advances in emerging memory technologies: From data storage to artificial intelligence

G Molas, E Nowak - Applied Sciences, 2021 - mdpi.com
This paper presents an overview of emerging memory technologies. It begins with the
presentation of stand-alone and embedded memory technology evolution, since the …

The promise of spintronics for unconventional computing

G Finocchio, M Di Ventra, KY Camsari… - Journal of Magnetism …, 2021 - Elsevier
Novel computational paradigms may provide the blueprint to help solving the time and
energy limitations that we face with our modern computers, and provide solutions to complex …

2 MB array-level demonstration of STT-MRAM process and performance towards L4 cache applications

JG Alzate, U Arslan, P Bai, J Brockman… - 2019 IEEE …, 2019 - ieeexplore.ieee.org
In this paper, we discuss array-level MTJ process, performance, and reliability requirements
for STT-MRAM operation in an L4 Cache application. We demonstrate 2 MB arrays of scaled …