Quantitative analysis of the density of trap states in semiconductors by electrical transport measurements on low-voltage field-effect transistors

M Geiger, L Schwarz, U Zschieschang, D Manske… - Physical Review …, 2018 - APS
A method for extracting the density and energetic distribution of the trap states in the
semiconductor of a field-effect transistor from its measured transfer characteristics is …

One-Volt TiO₂ Thin Film Transistors with Low-Temperature Process

J Zhang, Y Zhang, P Cui, G Lin, C Ni… - IEEE Electron Device …, 2021 - ieeexplore.ieee.org
We report one-volt TiO 2 thin film transistors (TFTs) with a low-temperature fabrication
process. The TFTs with the 300° C-annealed TiO 2 channel exhibit a high on/off current ratio …

Improved Performance and Bias Stability of Indium‐Tin‐Zinc‐Oxide Thin‐Film Transistors Enabled by an Oxygen‐Compensated Capping Layer

Z Xiao, J Jin, J Lee, G Choi, X Lin… - physica status solidi …, 2024 - Wiley Online Library
Herein, the effects of oxygen‐compensated capping layer (CCL) on the electrical
performance and stability of indium‐tin‐zinc‐oxide (ITZO) thin‐film transistors (TFTs) are …

High-Performance TiO2 Thin-Film Transistors: In-Depth Investigation of the Correlation between Interface Traps and Oxygen Vacancies

C Samanta, S Yuvaraja, T Zhama, H Zhao… - ACS Applied …, 2024 - ACS Publications
The role of surface contamination, along with surface oxygen vacancies, plays a key role in
the overall carrier transport in thin-film transistors (TFTs). In this study, it is shown that the …

Deep trap states relaxation in CaCu3Ti4O12

XJ Luo, S Yang, XR Su, YY Zhu, Y Wang… - Journal of Alloys and …, 2020 - Elsevier
The abnormal dielectric behaviors of the perovskite oxide CaCu 3 Ti 4 O 12 (CCTO)
ceramics were discussed. The hysteretic dc current–voltage (I–V) curves that change …

Photovoltaic Effect De-Embedded Photonic Characterization of Subgap Density of States in Amorphous Oxide Semiconductor Thin-Film Transistors

SH Han, H Kim, JH Bae, SJ Choi… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
The subgap density of states [(E)] is a critical parameter governing the electrical
characteristics and short-/long-term reliability of amorphous oxide semiconductor thin-film …

[PDF][PDF] Properties of high-capacitance gate dielectrics and their application in low-voltage organic thin-film transistors

M Geiger - 2022 - edoc.ub.uni-muenchen.de
Organic thin-film transistors (TFTs) are promising devices for future electronic applications.
The possibility to deposit organic semiconductors at relatively low process temperatures …