We report one-volt TiO 2 thin film transistors (TFTs) with a low-temperature fabrication process. The TFTs with the 300° C-annealed TiO 2 channel exhibit a high on/off current ratio …
Z Xiao, J Jin, J Lee, G Choi, X Lin… - physica status solidi …, 2024 - Wiley Online Library
Herein, the effects of oxygen‐compensated capping layer (CCL) on the electrical performance and stability of indium‐tin‐zinc‐oxide (ITZO) thin‐film transistors (TFTs) are …
The role of surface contamination, along with surface oxygen vacancies, plays a key role in the overall carrier transport in thin-film transistors (TFTs). In this study, it is shown that the …
XJ Luo, S Yang, XR Su, YY Zhu, Y Wang… - Journal of Alloys and …, 2020 - Elsevier
The abnormal dielectric behaviors of the perovskite oxide CaCu 3 Ti 4 O 12 (CCTO) ceramics were discussed. The hysteretic dc current–voltage (I–V) curves that change …
SH Han, H Kim, JH Bae, SJ Choi… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
The subgap density of states [(E)] is a critical parameter governing the electrical characteristics and short-/long-term reliability of amorphous oxide semiconductor thin-film …
Organic thin-film transistors (TFTs) are promising devices for future electronic applications. The possibility to deposit organic semiconductors at relatively low process temperatures …