On the use of two dimensional hexagonal boron nitride as dielectric
Recent advances in materials science allowed the incorporation of advanced two
dimensional (2D) materials in electronic devices. For example, field effect transistors (FETs) …
dimensional (2D) materials in electronic devices. For example, field effect transistors (FETs) …
A comprehensive review on recent advances in two-dimensional (2D) hexagonal boron nitride
MJ Molaei, M Younas… - ACS Applied Electronic …, 2021 - ACS Publications
Two-dimensional hexagonal boron nitride (2D-hBN) is an emerging 2D material that has
received considerable attention due to its exceptional properties including electric …
received considerable attention due to its exceptional properties including electric …
[PDF][PDF] A review on the use of graphene as a protective coating against corrosion
Graphene was synthesized for the first time one decade ago and, during this time, the
structure and properties of graphene have been well defined by many scientists. In parallel …
structure and properties of graphene have been well defined by many scientists. In parallel …
Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching
In order to fulfill the information storage needs of modern societies, the performance of
electronic nonvolatile memories (NVMs) should be continuously improved. In the past few …
electronic nonvolatile memories (NVMs) should be continuously improved. In the past few …
In situ observation of low‐power nano‐synaptic response in graphene oxide using conductive atomic force microscopy
Multiple studies have reported the observation of electro‐synaptic response in different
metal/insulator/metal devices. However, most of them analyzed large (> 1 µm2) devices that …
metal/insulator/metal devices. However, most of them analyzed large (> 1 µm2) devices that …
: a physical model for RRAM devices simulation
In the last few years, resistive random access memory (RRAM) has been proposed as one of
the most promising candidates to overcome the current Flash technology in the market of …
the most promising candidates to overcome the current Flash technology in the market of …
Nanoscale characterization of resistive switching using advanced conductive atomic force microscopy based setups
Conductive atomic force microscopy (CAFM) is a powerful tool for studying resistive
switching at the nanoscale. By applying sequences of IV curves and biased scans the write …
switching at the nanoscale. By applying sequences of IV curves and biased scans the write …
Variability of metal/h-BN/metal memristors grown via chemical vapor deposition on different materials
Chemical vapor deposition (CVD) is one of the most common techniques to grow large-area
hexagonal boron nitride (h-BN). However, the substrate on which the h-BN is grown plays …
hexagonal boron nitride (h-BN). However, the substrate on which the h-BN is grown plays …
Understanding current instabilities in conductive atomic force microscopy
Conductive atomic force microscopy (CAFM) is one of the most powerful techniques in
studying the electrical properties of various materials at the nanoscale. However …
studying the electrical properties of various materials at the nanoscale. However …
UHV CAFM characterization of high-k dielectrics: effect of the technique resolution on the pre-and post-breakdown electrical measurements
In this work, a Conductive Atomic Force Microscopy (CAFM) working in contact mode has
been used to compare the measured electrical properties and breakdown (BD) on ultra thin …
been used to compare the measured electrical properties and breakdown (BD) on ultra thin …