The creation of soft errors due to the propagation of single event transients (SETs) is a
significant reliability challenge in modern CMOS logic. SET concerns continue to be …

This paper reviews the status of research in modeling and simulation of single-event effects
(SEE) in digital devices and integrated circuits, with a special emphasis on the current …

Physical mechanisms responsible for nondestructive single-event effects in digital
microelectronics are reviewed, concentrating on silicon MOS devices and integrated circuits …

Charge sharing between adjacent devices can lead to increased Single Event Upset (SEU)
vulnerability. Key parameters affecting charge sharing are examined, and relative collected …

A unique circuit hardening technique is described, which can totally eliminate both alpha
and neutron induced soft errors from deep submicron microcircuits. This hardening …

Physical mechanisms of single-event effects that result in multiple-node charge collection or
charge sharing are reviewed and summarized. A historical overview of observed circuit …

A Bias-Dependent Single-Event Compact Model Implemented Into BSIM4 and a 90 nm
CMOS Process Design Kit Page 1 3152 IEEE TRANSACTIONS ON NUCLEAR SCIENCE …

Heavy-ion broad-beam experiments on a 130 nm CMOS technology have shown
anomalously-short single-event transient pulse widths. 3-D TCAD mixed-mode modeling in …

The radiation effects community has long known that single event transients in digital
microcircuits will have an increasing importance on error rates as device sizes shrink …

A new on-chip single-event transient (SET) test structure has been developed to
autonomously characterize the widths of random SET pulses. Simulation results show …