A review of technologies and design techniques of millimeter-wave power amplifiers
V Camarchia, R Quaglia, A Piacibello… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
This article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs),
focusing on broadband design techniques. An overview of the main solid-state technologies …
focusing on broadband design techniques. An overview of the main solid-state technologies …
An eight-element 140-GHz wafer-scale IF beamforming phased-array receiver with 64-QAM operation in CMOS RFSOI
This article presents a 140-GHz eight-element wafer-scale phased-array receiver based on
intermediate-frequency (IF) beamforming with 5-bit phase and 4-bit gain control. The chip …
intermediate-frequency (IF) beamforming with 5-bit phase and 4-bit gain control. The chip …
High Efficiency D-Band Multiway Power Combined Amplifiers With 17.5–19-dBm Psat and 14.2–12.1% Peak PAE in 45-nm CMOS RFSOI
S Li, GM Rebeiz - IEEE Journal of Solid-State Circuits, 2022 - ieeexplore.ieee.org
This article presents fully integrated power amplifiers (PAs) with eight-way low-loss power
combining for-band applications in the GlobalFoundries CMOS 45RFSOI process. The eight …
combining for-band applications in the GlobalFoundries CMOS 45RFSOI process. The eight …
[HTML][HTML] An overview of state-of-the-art D-band radar system components
P Stadler, H Papurcu, T Welling, S Tejero Alfageme… - Chips, 2022 - mdpi.com
In this article, a literature study has been conducted including 398 radar circuit elements
from 311 recent publications (mostly between 2010 and 2022) that have been reported …
from 311 recent publications (mostly between 2010 and 2022) that have been reported …
An eight-element 136–147 GHz wafer-scale phased-array transmitter with 32 dBm peak EIRP and> 16 Gbps 16QAM and 64QAM operation
This article presents a 140-GHz eight-element wafer-scale phased-array transmitter based
on intermediate-frequency (IF) beamforming with 5-bit phase and 4-bit gain control in the …
on intermediate-frequency (IF) beamforming with 5-bit phase and 4-bit gain control in the …
A 130-151 GHz 8-Way Power Amplifier with 16.8-17.5 dBm Psat and 11.7-13.4% PAE Using CMOS 45nm RFSOI
S Li, GM Rebeiz - 2021 IEEE Radio Frequency Integrated …, 2021 - ieeexplore.ieee.org
This paper presents a D-band linear power amplifier (PA) with high gain, high output power
and high efficiency using CMOS 45nm RFSOI process. An 8-way (4-way differential) power …
and high efficiency using CMOS 45nm RFSOI process. An 8-way (4-way differential) power …
Design of D-band transformer-based gain-boosting class-AB power amplifiers in silicon technologies
This paper presents design considerations and methodology for D-band transformer-based
Class-AB gain-boosting power amplifiers (PAs) in three advanced silicon technologies: 28 …
Class-AB gain-boosting power amplifiers (PAs) in three advanced silicon technologies: 28 …
Analysis and design of multi-stacked FET power amplifier with phase-compensation inductors in Millimeter-wave band
Stacked-FET topology is analyzed to increase the output power of a power amplifier (PA) in
the millimeter-wave (mm-wave) band. In the mm-wave band, parasitic capacitances of the …
the millimeter-wave (mm-wave) band. In the mm-wave band, parasitic capacitances of the …
300-GHz double-balanced up-converter using asymmetric MOS varactors in 65-nm CMOS
A 270–300-GHz double-balanced up-converter fabricated in 65-nm CMOS is presented. The
up-converter is the first to employ accumulation mode MOS asymmetric varactors (ASVARs) …
up-converter is the first to employ accumulation mode MOS asymmetric varactors (ASVARs) …
A 97–107 GHz Triple-Stacked-FET Power Amplifier with 23.7dB Peak Gain, 15.1dBm PSAT, and 18.6% PAEMAX in 28-nm FD-SOI CMOS
A 97–107 GHz power amplifier (PA) based on a stacked-FET topology is presented. In a
triple-stacked-FeT structure, stacking efficiency is analyzed using four combinations of series …
triple-stacked-FeT structure, stacking efficiency is analyzed using four combinations of series …