Internal Resistor Effect of Multilayer-Structured Synaptic Device for Low-Power Operation
H Kim, G Han, S Cho, J Woo, D Lee - Nanomaterials, 2024 - mdpi.com
A synaptic device with a multilayer structure is proposed to reduce the operating power of
neuromorphic computing systems while maintaining a high-density integration. A simple …
neuromorphic computing systems while maintaining a high-density integration. A simple …
Brain-inspired computing: can 2D materials bridge the gap between biological and artificial neural networks?
This modern era of technology with data flood actively demands the development of
excellent non-volatile storage (NVS) and computing devices, which can overcome the …
excellent non-volatile storage (NVS) and computing devices, which can overcome the …
[HTML][HTML] Non-stoichiometric WO3− x-based nanoscale memristor for high-density memory
This work demonstrates forming-free and self-limiting resistive switching characteristics of
non-stoichiometric WO 3− x-based nanoscale devices without using any selector layer …
non-stoichiometric WO 3− x-based nanoscale devices without using any selector layer …
[HTML][HTML] Nonvolatile behavior of resistive switching memory in Ag/WOx/TiOy/ITO device based on WOx/TiOy heterojunction
H Elshekh, H Wang, C Yang, S Zhu - Journal of Applied Physics, 2024 - pubs.aip.org
Two-terminal structure memristors are the most promising electronic devices that could play
a significant role in artificial intelligence applications of the next generation and the post …
a significant role in artificial intelligence applications of the next generation and the post …