The electron spin degree of freedom can provide the functionality of “nonvolatility” in
electronic devices. For example, magnetoresistive random access memory (MRAM) is …

We review the current status of research on magnetization switching that utilizes the voltage-
controlled magnetic anisotropy (VCMA) effect. In particular, we focus on the magnetization …

Stochastic units based on magnetic tunnel junctions have shown a high energy-efficient
pathway to perform neuromorphic computing. We propose a voltage-controlled spintronic …

This article discusses the current state of development, open research opportunities, and
application perspectives of electric‐field‐controlled magnetic tunnel junctions that use the …

Spin-orbit torque (SOT) is a promising technique for next-generation magnetic random-
access memory. Recent experiments have shown that materials with low-symmetry …

The voltage controlled magnetic anisotropy (VCMA) becomes a subject of major interest for
spintronics due to its promising potential outcome: fast magnetization manipulation in …

Write error rate (WER) in voltage-induced magnetization switching of a conically magnetized
free layer with an elliptic cylinder shape is numerically calculated on the basis of the …

Voltage-controlled magnetoresistive random access memory (VC-MRAM) based on voltage-
induced dynamic switching in magnetic tunnel junctions (MTJs) is a promising ultimate non …

The impact of 400 keV Ar+ irradiation on the magnetic and electrical properties of in-plane
magnetized magnetic tunnel junction (MTJ) stacks was investigated by ferromagnetic …

In this study, the first-(K 1) and second-order (K 2) magnetic anisotropies are investigated as
a function of post-annealing temperature (T a) in Pt/Co/MgO heterostructures. We find that …