Worldwide efforts are underway to integrate semiconductors and magnetic materials, aiming
to create a revolutionary and energy-efficient information technology in which digital data …

In silicon spintronics, the unique qualities of ferromagnetic materials are combined with
those of silicon, aiming at creating an alternative, energy-efficient information technology in …

Molybdenum disulfide has recently emerged as a promising two-dimensional
semiconducting material for nanoelectronic, optoelectronic, and spintronic applications …

Heat generation by electric current, which is ubiquitous in electronic devices and circuits,
raises energy consumption and will become increasingly problematic in future generations …

Although the creation of spin polarization in various nonmagnetic media via electrical spin
injection from a ferromagnetic tunnel contact has been demonstrated, much of the basic …

Black phosphorus (BP) has been recently unveiled as a promising 2D direct bandgap
semiconducting material. Here, ambipolar field‐effect transistor behavior of nanolayers of …

We study all of the leading-order contributions to spin relaxation of conduction electrons in
silicon due to the electron-phonon interaction. Using group theory, the k· p perturbation …

Implementing spin functionalities in Si and understanding the fundamental processes of spin
injection and detection, are the main challenges in spintronics. Here we demonstrate large …

We report the all-electrical spin injection and detection in CoFe/MgO/moderately doped n-
Ge contact at room temperature (RT), employing three-terminal Hanle measurements. A …

We report the first measurements of spin injection into graphene through a 20-nm-thick
tungsten disulphide (WS 2) layer, along with a modified spin relaxation time (τ s) in …